Electron-phonon scattering and high-field transport in n-type Si

Mogens Hoffmann Jørgensen

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Abstract

The transport problem for warm and hot electrons in silicon is formulated using a simple, nonparabolic band model. The electronic distribution function is written in terms of an extended diffusion approximation which allows for a certain amount of "streaming" of the distribution in momentum space. The solution of the Boltzmann equation is reduced to the solution of a coupled set of ordinary second-order differential equations which are well suited for iterative numerical techniques. By comparing experimental and numerical data we can assign realistic values to electron-phonon coupling constants and a good overall fit is obtained for several types of experiment.
Original languageEnglish
JournalPhysical Review B
Volume18
Issue number10
Pages (from-to)5657-5666
ISSN2469-9950
DOIs
Publication statusPublished - 1978

Bibliographical note

Copyright (1978) by the American Physical Society.

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