Electron microscopy of reverse biased p–n junctions

M. Beleggia, D. Cristofori, P.G. Merli, G. Pozzi

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

The aim of this paper is to present and discuss the recent results obtained in the investigation of reverse-biased p–n junctions by means of the out-of-focus method. It will be shown how the interpretation of the experimental images is not in agreement with the expectations based on the bulk p–n junction theory. The possible causes of this discrepancy will be discussed: among them a significant reason could be the finite specimen thickness with the associated surface states, which influences the width and shape of the depletion layer in the thinned specimen.
Original languageEnglish
JournalMicron
Volume31
Issue number3
Pages (from-to)231-236
Number of pages6
ISSN0968-4328
DOIs
Publication statusPublished - 2000
Externally publishedYes
EventWorkshop on Microstructural and Microanalytical Characterisation of Semiconducting Materials and Devices - Lecce, Italy
Duration: 4 Nov 199811 Nov 1998

Workshop

WorkshopWorkshop on Microstructural and Microanalytical Characterisation of Semiconducting Materials and Devices
Country/TerritoryItaly
CityLecce
Period04/11/199811/11/1998

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