Electron microscopic and optical investigations of the indium distribution GaAs capped InxGa1-xAs islands

U. Woggon, Wolfgang Werner Langbein, Jørn Märcher Hvam, A. Rosenauer, T. Remmele, D. Gerthsen

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    Abstract

    Results from a structural and optical analysis of buried InxGa1-xAs islands carried out after the process of GaAs overgrowth are presented. It is found that during the growth process, the indium concentration profile changes and the thickness of the wetting layer emanating from a Stranski-Krastanow growth mode grows significantly. Quantum dots are formed due to strong gradients in the indium concentration, which is demonstrated by photoluminescence and excitation spectroscopy of the buried InxGa1-xAs islands. (C) 1997 American Institute of Physics.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume71
    Issue number3
    Pages (from-to)377-379
    ISSN0003-6951
    DOIs
    Publication statusPublished - 1997

    Bibliographical note

    Copyright (1997) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    Keywords

    • QUANTUM DOTS

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