Electron dynamics in metals and semiconductors in strong THz fields

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

Semiconductors and metals respond to strong electric fields in a highly nonlinear fashion. Using single-cycle THz field transients it is possible to investigate this response in regimes not accessible by transport-based measurements. Extremely high fields can be applied without material damage, intrinsic, undoped materials can be studied, and field-induced electron emission into free space can be investigated in detail, thereby offering new knowledge about material response to strong THz-frequency fields relevant for near-future generations of electronic circuitry.
Original languageEnglish
Title of host publicationProceedings of the 42nd International Conference on Infrared, Millimeter, and Terahertz Waves
Number of pages2
PublisherIEEE
Publication date2017
ISBN (Print)9781509060504
DOIs
Publication statusPublished - 2017
Event42nd International Conference on Infrared, Millimeter, and Terahertz Waves - Cancun International Convention Center, Cancun, Mexico
Duration: 27 Aug 20171 Sep 2017

Conference

Conference42nd International Conference on Infrared, Millimeter, and Terahertz Waves
LocationCancun International Convention Center
CountryMexico
CityCancun
Period27/08/201701/09/2017
Series International Conference on Infrared, Millimeter and Terahertz Waves
ISSN2162-2027

Cite this

Jepsen, P. U. (2017). Electron dynamics in metals and semiconductors in strong THz fields. In Proceedings of the 42nd International Conference on Infrared, Millimeter, and Terahertz Waves IEEE. International Conference on Infrared, Millimeter and Terahertz Waves https://doi.org/10.1109/IRMMW-THz.2017.8067201