Electromechanical fields in GaN/AlN wurtzite quantum dots

D. Barettin, B. Lassen, M Willatzen

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

We show that the governing equations for the electromechanical fields of wurtzite structures are axisymmetric, hence all electric- and mechanical-field solutions are axisymmetric as well and the original three-dimensional problem can be solved as a two-dimensional mathematical-model problem [1]. We present results of the combined influence of lattice mismatch, piezoelectric effects, and spontaneous polarization for wurtzite (WZ) structures consisting of a GaN quantum dot embedded in a AlN matrix.
Original languageEnglish
Book seriesJournal of Physics: Conference Series (Online)
Volume107
Issue number1
Pages (from-to)012001
Number of pages9
ISSN1742-6596
DOIs
Publication statusPublished - 2008
Externally publishedYes
EventConference on Physics-Based Mathematical Models of Low-Dimensional Semiconductor Nanostructures - Analysis and Computation - Alberta, Canada
Duration: 18 Nov 200723 Nov 2007

Conference

ConferenceConference on Physics-Based Mathematical Models of Low-Dimensional Semiconductor Nanostructures - Analysis and Computation
CountryCanada
CityAlberta
Period18/11/200723/11/2007

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