Electromechanical effects in electron structure for GaN/AlN quantum dots

B. Lassen; Morten Willatzen; D. Barettin; R.V.N. Melnik; L.C. Lew Yan Voon

doi:10.1088/1742-6596/107/1/012008

Electromechanical effects in electron structure for GaN/AlN quantum dots

B. Lassen
, Morten Willatzen
, D. Barettin
, R.V.N. Melnik
, L.C. Lew Yan Voon

University of Southern Denmark
Wilfrid Laurier University
Wright State University

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

We study the impact of using the fully coupled electromechanical equations including piezoelectric effect and spontaneous polarization as compared to the semi-coupled approach, where the strain is solved first without piezoelectric coupling and then inserted into the equation for the electric potential. We show that for circular GaN/AlN quantum dots the fully coupled approach is needed for dots with a radius comparable to or larger than the height, however, when the radius is smaller than the height the semi-coupled approach is sufficient. We highlight this by studying the effect on the electronic structure using an effective mass approximation.

Original language	English
Book series	Journal of Physics: Conference Series (Online)
Volume	107
Issue number	1
Pages (from-to)	012008
Number of pages	9
ISSN	1742-6596
DOIs	https://doi.org/10.1088/1742-6596/107/1/012008
Publication status	Published - 2008
Externally published	Yes
Event	Workshop on Physics-Based Mathematical Models of Low-Dimensional Semiconductor Nanostructures: Analysis and Computation 2007 - Banff, Canada Duration: 18 Nov 2007 → 23 Nov 2007

Workshop

Workshop	Workshop on Physics-Based Mathematical Models of Low-Dimensional Semiconductor Nanostructures: Analysis and Computation 2007
Country/Territory	Canada
City	Banff
Period	18/11/2007 → 23/11/2007

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@article{6067c95ecfa446f788dabb9e74e17078,

title = "Electromechanical effects in electron structure for GaN/AlN quantum dots",

abstract = "We study the impact of using the fully coupled electromechanical equations including piezoelectric effect and spontaneous polarization as compared to the semi-coupled approach, where the strain is solved first without piezoelectric coupling and then inserted into the equation for the electric potential. We show that for circular GaN/AlN quantum dots the fully coupled approach is needed for dots with a radius comparable to or larger than the height, however, when the radius is smaller than the height the semi-coupled approach is sufficient. We highlight this by studying the effect on the electronic structure using an effective mass approximation.",

author = "B. Lassen and Morten Willatzen and D. Barettin and R.V.N. Melnik and \{Lew Yan Voon\}, L.C.",

year = "2008",

doi = "10.1088/1742-6596/107/1/012008",

language = "English",

volume = "107",

pages = "012008",

journal = "Journal of Physics: Conference Series (Online)",

issn = "1742-6596",

publisher = "IOP Publishing",

number = "1",

note = "Workshop on Physics-Based Mathematical Models of Low-Dimensional Semiconductor Nanostructures: Analysis and Computation 2007 ; Conference date: 18-11-2007 Through 23-11-2007",

}

TY - JOUR

T1 - Electromechanical effects in electron structure for GaN/AlN quantum dots

AU - Lassen, B.

AU - Willatzen, Morten

AU - Barettin, D.

AU - Melnik, R.V.N.

AU - Lew Yan Voon, L.C.

PY - 2008

Y1 - 2008

N2 - We study the impact of using the fully coupled electromechanical equations including piezoelectric effect and spontaneous polarization as compared to the semi-coupled approach, where the strain is solved first without piezoelectric coupling and then inserted into the equation for the electric potential. We show that for circular GaN/AlN quantum dots the fully coupled approach is needed for dots with a radius comparable to or larger than the height, however, when the radius is smaller than the height the semi-coupled approach is sufficient. We highlight this by studying the effect on the electronic structure using an effective mass approximation.

AB - We study the impact of using the fully coupled electromechanical equations including piezoelectric effect and spontaneous polarization as compared to the semi-coupled approach, where the strain is solved first without piezoelectric coupling and then inserted into the equation for the electric potential. We show that for circular GaN/AlN quantum dots the fully coupled approach is needed for dots with a radius comparable to or larger than the height, however, when the radius is smaller than the height the semi-coupled approach is sufficient. We highlight this by studying the effect on the electronic structure using an effective mass approximation.

U2 - 10.1088/1742-6596/107/1/012008

DO - 10.1088/1742-6596/107/1/012008

M3 - Journal article

SN - 1742-6596

VL - 107

SP - 012008

JO - Journal of Physics: Conference Series (Online)

JF - Journal of Physics: Conference Series (Online)

IS - 1

T2 - Workshop on Physics-Based Mathematical Models of Low-Dimensional Semiconductor Nanostructures: Analysis and Computation 2007

Y2 - 18 November 2007 through 23 November 2007

ER -

Electromechanical effects in electron structure for GaN/AlN quantum dots

Abstract

Workshop

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