Electromechanical effects in electron structure for GaN/AlN quantum dots

B. Lassen, Morten Willatzen, D. Barettin, R.V.N. Melnik, L.C. Lew Yan Voon

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

We study the impact of using the fully coupled electromechanical equations including piezoelectric effect and spontaneous polarization as compared to the semi-coupled approach, where the strain is solved first without piezoelectric coupling and then inserted into the equation for the electric potential. We show that for circular GaN/AlN quantum dots the fully coupled approach is needed for dots with a radius comparable to or larger than the height, however, when the radius is smaller than the height the semi-coupled approach is sufficient. We highlight this by studying the effect on the electronic structure using an effective mass approximation.
Original languageEnglish
Book seriesJournal of Physics: Conference Series (Online)
Volume107
Issue number1
Pages (from-to)012008
Number of pages9
ISSN1742-6596
DOIs
Publication statusPublished - 2008
Externally publishedYes
EventWorkshop on Physics-Based Mathematical Models of Low-Dimensional Semiconductor Nanostructures: Analysis and Computation 2007 - Banff, Canada
Duration: 18 Nov 200723 Nov 2007

Workshop

WorkshopWorkshop on Physics-Based Mathematical Models of Low-Dimensional Semiconductor Nanostructures: Analysis and Computation 2007
Country/TerritoryCanada
CityBanff
Period18/11/200723/11/2007

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