Abstract
Electrochemical behavior of oxofluoro complexes of boron,
synthesized both in situ in FLINAK melt and added into the melt as
Na3B3O3F6 compound, was by linear voltammetry within the range of
570-750 oC. It was shown that in lower part of this range the
electrochemical reduction of BOF2- complexes follows to ECE
mechanism. Growth of temperature makes the electrode proecesses
more simple. At 700 oC boron reduces to the elemental state in one
irreversible step. Values of diffusion coefficient changes in this
interval of temperatures according to the equation: lg D= -1,66 -
3219/T with the activation energy of 61.6 kJ/mol. Study of the
thermal stability of boron containing oxofluoro melts showed that
O/B ratio changes in time due to evaporation of BF3. As a result
borate complexes emerge in the melt alongside with oxofluoro ones.
Original language | Russian |
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Journal | Elektrokhimiya |
Volume | 33 |
Pages (from-to) | 674-679 |
ISSN | 0424-8570 |
Publication status | Published - 1997 |