Electrically driven surface plasmon light-emitting diodes

Research output: Contribution to conferencePaper – Annual report year: 2016Researchpeer-review

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We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.
Original languageEnglish
Publication date2016
Number of pages1
Publication statusPublished - 2016
Event4th International workshop on LEDs and solar applications - Meijo University, Nagoya, Japan
Duration: 30 Mar 201631 Mar 2016

Conference

Conference4th International workshop on LEDs and solar applications
LocationMeijo University
CountryJapan
CityNagoya
Period30/03/201631/03/2016

Bibliographical note

Invited talk at '4th International workshop on LEDs and solar applications', held at Meijo University, Nagoya, Japan, Mar.30-31, 2016

ID: 123341968