Abstract
We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.
| Original language | English |
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| Publication date | 2016 |
| Number of pages | 1 |
| Publication status | Published - 2016 |
| Event | 4th International Workshop on LEDs and Solar Applications - Meijo University, Nagoya, Japan Duration: 30 Mar 2016 → 31 Mar 2016 |
Conference
| Conference | 4th International Workshop on LEDs and Solar Applications |
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| Location | Meijo University |
| Country/Territory | Japan |
| City | Nagoya |
| Period | 30/03/2016 → 31/03/2016 |