Electrically driven surface plasmon light-emitting diodes

Ahmed Fadil (Invited author), Yiyu Ou (Invited author), Daisuke Iida (Invited author), Oleksii Kopylov (Invited author), Haiyan Ou (Invited author)

Research output: Contribution to conferencePaperResearchpeer-review

Abstract

We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.
Original languageEnglish
Publication date2016
Number of pages1
Publication statusPublished - 2016
Event4th International workshop on LEDs and solar applications - Meijo University, Nagoya, Japan
Duration: 30 Mar 201631 Mar 2016

Conference

Conference4th International workshop on LEDs and solar applications
LocationMeijo University
CountryJapan
CityNagoya
Period30/03/201631/03/2016

Bibliographical note

Invited talk at '4th International workshop on LEDs and solar applications', held at Meijo University, Nagoya, Japan, Mar.30-31, 2016

Cite this

Fadil, A., Ou, Y., Iida, D., Kopylov, O., & Ou, H. (2016). Electrically driven surface plasmon light-emitting diodes. Paper presented at 4th International workshop on LEDs and solar applications, Nagoya, Japan.