We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.
|Number of pages||1|
|Publication status||Published - 2016|
|Event||4th International workshop on LEDs and solar applications - Meijo University, Nagoya, Japan|
Duration: 30 Mar 2016 → 31 Mar 2016
|Conference||4th International workshop on LEDs and solar applications|
|Period||30/03/2016 → 31/03/2016|
Bibliographical noteInvited talk at '4th International workshop on LEDs and solar applications', held at Meijo University, Nagoya, Japan, Mar.30-31, 2016
Fadil, A., Ou, Y., Iida, D., Kopylov, O., & Ou, H. (2016). Electrically driven surface plasmon light-emitting diodes. Paper presented at 4th International workshop on LEDs and solar applications, Nagoya, Japan.