Electrically driven surface plasmon light-emitting diodes

Ahmed Fadil (Invited author), Yiyu Ou (Invited author), Daisuke Iida (Invited author), Oleksii Kopylov (Invited author), Haiyan Ou (Invited author)

Research output: Contribution to conferencePaperResearchpeer-review


We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.
Original languageEnglish
Publication date2016
Number of pages1
Publication statusPublished - 2016
Event4th International workshop on LEDs and solar applications - Meijo University, Nagoya, Japan
Duration: 30 Mar 201631 Mar 2016


Conference4th International workshop on LEDs and solar applications
LocationMeijo University

Bibliographical note

Invited talk at '4th International workshop on LEDs and solar applications', held at Meijo University, Nagoya, Japan, Mar.30-31, 2016


Dive into the research topics of 'Electrically driven surface plasmon light-emitting diodes'. Together they form a unique fingerprint.

Cite this