Abstract
We have found that the electrical properties of carriers across the metal-semiconductor interface for alloyed Zn based metallizations to n- and p-InP are dominated by nanosized non-barrier inhomogeneities. The effective area covered by the nanosized regions is a small fraction of the contact area resulting in high values of the specific contact resistance to p-InP. For n(-)-InP, thermionic emission across nanosized inhomogeneities dominates the carrier flow when T-ann > 440 degrees C. (C) 1998 Elsevier Science B.V.
Original language | English |
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Journal | Applied Surface Science |
Volume | 123-124 |
Pages (from-to) | 567-570 |
ISSN | 0169-4332 |
DOIs | |
Publication status | Published - 1998 |