Electrical properties of nanosized non-barrier inhomogeneities in Zn-based metal-semiconductor contacts to InP

Thomas Clausen; Otto Leistiko

doi:10.1016/S0169-4332(97)00572-2

Electrical properties of nanosized non-barrier inhomogeneities in Zn-based metal-semiconductor contacts to InP

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Abstract

We have found that the electrical properties of carriers across the metal-semiconductor interface for alloyed Zn based metallizations to n- and p-InP are dominated by nanosized non-barrier inhomogeneities. The effective area covered by the nanosized regions is a small fraction of the contact area resulting in high values of the specific contact resistance to p-InP. For n(-)-InP, thermionic emission across nanosized inhomogeneities dominates the carrier flow when T-ann > 440 degrees C. (C) 1998 Elsevier Science B.V.

Original language	English
Journal	Applied Surface Science
Volume	123-124
Pages (from-to)	567-570
ISSN	0169-4332
DOIs	https://doi.org/10.1016/S0169-4332(97)00572-2
Publication status	Published - 1998

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title = "Electrical properties of nanosized non-barrier inhomogeneities in Zn-based metal-semiconductor contacts to InP",

abstract = "We have found that the electrical properties of carriers across the metal-semiconductor interface for alloyed Zn based metallizations to n- and p-InP are dominated by nanosized non-barrier inhomogeneities. The effective area covered by the nanosized regions is a small fraction of the contact area resulting in high values of the specific contact resistance to p-InP. For n(-)-InP, thermionic emission across nanosized inhomogeneities dominates the carrier flow when T-ann > 440 degrees C. (C) 1998 Elsevier Science B.V. ",

author = "Thomas Clausen and Otto Leistiko",

year = "1998",

doi = "10.1016/S0169-4332(97)00572-2",

language = "English",

volume = "123-124",

pages = "567--570",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

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T1 - Electrical properties of nanosized non-barrier inhomogeneities in Zn-based metal-semiconductor contacts to InP

AU - Clausen, Thomas

AU - Leistiko, Otto

PY - 1998

Y1 - 1998

N2 - We have found that the electrical properties of carriers across the metal-semiconductor interface for alloyed Zn based metallizations to n- and p-InP are dominated by nanosized non-barrier inhomogeneities. The effective area covered by the nanosized regions is a small fraction of the contact area resulting in high values of the specific contact resistance to p-InP. For n(-)-InP, thermionic emission across nanosized inhomogeneities dominates the carrier flow when T-ann > 440 degrees C. (C) 1998 Elsevier Science B.V.

AB - We have found that the electrical properties of carriers across the metal-semiconductor interface for alloyed Zn based metallizations to n- and p-InP are dominated by nanosized non-barrier inhomogeneities. The effective area covered by the nanosized regions is a small fraction of the contact area resulting in high values of the specific contact resistance to p-InP. For n(-)-InP, thermionic emission across nanosized inhomogeneities dominates the carrier flow when T-ann > 440 degrees C. (C) 1998 Elsevier Science B.V.

U2 - 10.1016/S0169-4332(97)00572-2

DO - 10.1016/S0169-4332(97)00572-2

M3 - Journal article

SN - 0169-4332

VL - 123-124

SP - 567

EP - 570

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Electrical properties of nanosized non-barrier inhomogeneities in Zn-based metal-semiconductor contacts to InP

Abstract

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