Electrical properties of nanosized non-barrier inhomogeneities in Zn-based metal-semiconductor contacts to InP

Thomas Clausen, Otto Leistiko

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    We have found that the electrical properties of carriers across the metal-semiconductor interface for alloyed Zn based metallizations to n- and p-InP are dominated by nanosized non-barrier inhomogeneities. The effective area covered by the nanosized regions is a small fraction of the contact area resulting in high values of the specific contact resistance to p-InP. For n(-)-InP, thermionic emission across nanosized inhomogeneities dominates the carrier flow when T-ann > 440 degrees C. (C) 1998 Elsevier Science B.V.
    Original languageEnglish
    JournalApplied Surface Science
    Volume123-124
    Pages (from-to)567-570
    ISSN0169-4332
    DOIs
    Publication statusPublished - 1998

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