Electrical injection schemes for nanolasers

Alexandra Lupi, Il-Sug Chung, Kresten Yvind

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

The performance of injection schemes among recently demonstrated electrically pumped photonic crystal nanolasers has been investigated numerically. The computation has been carried out at room temperature using a commercial semiconductor simulation software. For the simulations two electrical injection schemes have been compared: vertical pi- n junction through a current post structure as in1 and lateral p-i-n junction with either uniform material as in2 or with a buried heterostructure (BH) as in3. To allow a direct comparison of the three schemes the same active material composition consisting of 3 InGaAsP QWs on an InP substrate has been chosen for the modeling. In the simulations the main focus is on the electrical and optical properties of the nanolasers i.e. electrical resistance, threshold voltage, threshold current and wallplug efficiency. In the current flow evaluation the lowest threshold current has been achieved with the lateral electrical injection through the BH; while the lowest resistance has been obtained from the current post structure even though this model shows a higher current threshold because of the lack of carrier confinement. Final scope of the simulations is the analyses of advantages and disadvantages of different electrical injection schemes for the development of the optimal device design for the future generation of electrically pumped nanolasers for terabit communication.
Original languageEnglish
JournalProceedings of SPIE, the International Society for Optical Engineering
Volume8640
Pages (from-to)86400Y
Number of pages10
ISSN0277-786X
DOIs
Publication statusPublished - 2013
EventSPIE Photonics West : Novel In-Plane Semiconductor Lasers XII - San Francisco, CA, United States
Duration: 2 Feb 20137 Feb 2013

Conference

ConferenceSPIE Photonics West : Novel In-Plane Semiconductor Lasers XII
CountryUnited States
CitySan Francisco, CA
Period02/02/201307/02/2013

Keywords

  • Computer software
  • Optical properties
  • Semiconductor junctions
  • Semiconductor lasers
  • Electric properties

Cite this

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title = "Electrical injection schemes for nanolasers",
abstract = "The performance of injection schemes among recently demonstrated electrically pumped photonic crystal nanolasers has been investigated numerically. The computation has been carried out at room temperature using a commercial semiconductor simulation software. For the simulations two electrical injection schemes have been compared: vertical pi- n junction through a current post structure as in1 and lateral p-i-n junction with either uniform material as in2 or with a buried heterostructure (BH) as in3. To allow a direct comparison of the three schemes the same active material composition consisting of 3 InGaAsP QWs on an InP substrate has been chosen for the modeling. In the simulations the main focus is on the electrical and optical properties of the nanolasers i.e. electrical resistance, threshold voltage, threshold current and wallplug efficiency. In the current flow evaluation the lowest threshold current has been achieved with the lateral electrical injection through the BH; while the lowest resistance has been obtained from the current post structure even though this model shows a higher current threshold because of the lack of carrier confinement. Final scope of the simulations is the analyses of advantages and disadvantages of different electrical injection schemes for the development of the optimal device design for the future generation of electrically pumped nanolasers for terabit communication.",
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author = "Alexandra Lupi and Il-Sug Chung and Kresten Yvind",
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Electrical injection schemes for nanolasers. / Lupi, Alexandra; Chung, Il-Sug; Yvind, Kresten.

In: Proceedings of SPIE, the International Society for Optical Engineering, Vol. 8640, 2013, p. 86400Y.

Research output: Contribution to journalConference articleResearchpeer-review

TY - GEN

T1 - Electrical injection schemes for nanolasers

AU - Lupi, Alexandra

AU - Chung, Il-Sug

AU - Yvind, Kresten

PY - 2013

Y1 - 2013

N2 - The performance of injection schemes among recently demonstrated electrically pumped photonic crystal nanolasers has been investigated numerically. The computation has been carried out at room temperature using a commercial semiconductor simulation software. For the simulations two electrical injection schemes have been compared: vertical pi- n junction through a current post structure as in1 and lateral p-i-n junction with either uniform material as in2 or with a buried heterostructure (BH) as in3. To allow a direct comparison of the three schemes the same active material composition consisting of 3 InGaAsP QWs on an InP substrate has been chosen for the modeling. In the simulations the main focus is on the electrical and optical properties of the nanolasers i.e. electrical resistance, threshold voltage, threshold current and wallplug efficiency. In the current flow evaluation the lowest threshold current has been achieved with the lateral electrical injection through the BH; while the lowest resistance has been obtained from the current post structure even though this model shows a higher current threshold because of the lack of carrier confinement. Final scope of the simulations is the analyses of advantages and disadvantages of different electrical injection schemes for the development of the optimal device design for the future generation of electrically pumped nanolasers for terabit communication.

AB - The performance of injection schemes among recently demonstrated electrically pumped photonic crystal nanolasers has been investigated numerically. The computation has been carried out at room temperature using a commercial semiconductor simulation software. For the simulations two electrical injection schemes have been compared: vertical pi- n junction through a current post structure as in1 and lateral p-i-n junction with either uniform material as in2 or with a buried heterostructure (BH) as in3. To allow a direct comparison of the three schemes the same active material composition consisting of 3 InGaAsP QWs on an InP substrate has been chosen for the modeling. In the simulations the main focus is on the electrical and optical properties of the nanolasers i.e. electrical resistance, threshold voltage, threshold current and wallplug efficiency. In the current flow evaluation the lowest threshold current has been achieved with the lateral electrical injection through the BH; while the lowest resistance has been obtained from the current post structure even though this model shows a higher current threshold because of the lack of carrier confinement. Final scope of the simulations is the analyses of advantages and disadvantages of different electrical injection schemes for the development of the optimal device design for the future generation of electrically pumped nanolasers for terabit communication.

KW - Computer software

KW - Optical properties

KW - Semiconductor junctions

KW - Semiconductor lasers

KW - Electric properties

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