Electrical characterization of single nanometer-wide Si fins in dense arrays

Steven Folkersma*, Janusz Bogdanowicz, Andreas Schulze, Paola Favia, Dirch H. Petersen, Ole Hansen, Henrik H. Henrichsen, Peter F. Nielsen, Lior Shiv, Wilfried Vandervorst

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Abstract

This paper demonstrates the development of a methodology using the micro four-point probe (mu 4PP) technique to electrically characterize single nanometer-wide fins arranged in dense arrays. We show that through the concept of carefully controlling the electrical contact formation process, the electrical measurement can be confined to one individual fin although the used measurement electrodes physically contact more than one fin. We demonstrate that we can precisely measure the resistance of individual ca. 20 nm wide fins and that we can correlate the measured variations in fin resistance with variations in their nanometric width. Due to the demonstrated high precision of the technique, this opens the prospect for the use of mu 4PP in electrical critical dimension metrology.
Original languageEnglish
JournalBeilstein Journal of Nanotechnology
Volume9
Pages (from-to)1853-1857
Number of pages5
ISSN2190-4286
DOIs
Publication statusPublished - 2018

Keywords

  • Critical dimension metrology
  • Electrical characterization
  • finFET
  • Micro four-point probe
  • Sheet resistance

Cite this

Folkersma, Steven ; Bogdanowicz, Janusz ; Schulze, Andreas ; Favia, Paola ; Petersen, Dirch H. ; Hansen, Ole ; Henrichsen, Henrik H. ; Nielsen, Peter F. ; Shiv, Lior ; Vandervorst, Wilfried. / Electrical characterization of single nanometer-wide Si fins in dense arrays. In: Beilstein Journal of Nanotechnology. 2018 ; Vol. 9. pp. 1853-1857.
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abstract = "This paper demonstrates the development of a methodology using the micro four-point probe (mu 4PP) technique to electrically characterize single nanometer-wide fins arranged in dense arrays. We show that through the concept of carefully controlling the electrical contact formation process, the electrical measurement can be confined to one individual fin although the used measurement electrodes physically contact more than one fin. We demonstrate that we can precisely measure the resistance of individual ca. 20 nm wide fins and that we can correlate the measured variations in fin resistance with variations in their nanometric width. Due to the demonstrated high precision of the technique, this opens the prospect for the use of mu 4PP in electrical critical dimension metrology.",
keywords = "Critical dimension metrology, Electrical characterization, finFET, Micro four-point probe, Sheet resistance",
author = "Steven Folkersma and Janusz Bogdanowicz and Andreas Schulze and Paola Favia and Petersen, {Dirch H.} and Ole Hansen and Henrichsen, {Henrik H.} and Nielsen, {Peter F.} and Lior Shiv and Wilfried Vandervorst",
year = "2018",
doi = "10.3762/bjnano.9.178",
language = "English",
volume = "9",
pages = "1853--1857",
journal = "Beilstein Journal of Nanotechnology",
issn = "2190-4286",
publisher = "Beilstein-Institut",

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Folkersma, S, Bogdanowicz, J, Schulze, A, Favia, P, Petersen, DH, Hansen, O, Henrichsen, HH, Nielsen, PF, Shiv, L & Vandervorst, W 2018, 'Electrical characterization of single nanometer-wide Si fins in dense arrays', Beilstein Journal of Nanotechnology, vol. 9, pp. 1853-1857. https://doi.org/10.3762/bjnano.9.178

Electrical characterization of single nanometer-wide Si fins in dense arrays. / Folkersma, Steven; Bogdanowicz, Janusz; Schulze, Andreas; Favia, Paola; Petersen, Dirch H.; Hansen, Ole; Henrichsen, Henrik H.; Nielsen, Peter F.; Shiv, Lior; Vandervorst, Wilfried.

In: Beilstein Journal of Nanotechnology, Vol. 9, 2018, p. 1853-1857.

Research output: Contribution to journalJournal articleResearchpeer-review

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T1 - Electrical characterization of single nanometer-wide Si fins in dense arrays

AU - Folkersma, Steven

AU - Bogdanowicz, Janusz

AU - Schulze, Andreas

AU - Favia, Paola

AU - Petersen, Dirch H.

AU - Hansen, Ole

AU - Henrichsen, Henrik H.

AU - Nielsen, Peter F.

AU - Shiv, Lior

AU - Vandervorst, Wilfried

PY - 2018

Y1 - 2018

N2 - This paper demonstrates the development of a methodology using the micro four-point probe (mu 4PP) technique to electrically characterize single nanometer-wide fins arranged in dense arrays. We show that through the concept of carefully controlling the electrical contact formation process, the electrical measurement can be confined to one individual fin although the used measurement electrodes physically contact more than one fin. We demonstrate that we can precisely measure the resistance of individual ca. 20 nm wide fins and that we can correlate the measured variations in fin resistance with variations in their nanometric width. Due to the demonstrated high precision of the technique, this opens the prospect for the use of mu 4PP in electrical critical dimension metrology.

AB - This paper demonstrates the development of a methodology using the micro four-point probe (mu 4PP) technique to electrically characterize single nanometer-wide fins arranged in dense arrays. We show that through the concept of carefully controlling the electrical contact formation process, the electrical measurement can be confined to one individual fin although the used measurement electrodes physically contact more than one fin. We demonstrate that we can precisely measure the resistance of individual ca. 20 nm wide fins and that we can correlate the measured variations in fin resistance with variations in their nanometric width. Due to the demonstrated high precision of the technique, this opens the prospect for the use of mu 4PP in electrical critical dimension metrology.

KW - Critical dimension metrology

KW - Electrical characterization

KW - finFET

KW - Micro four-point probe

KW - Sheet resistance

U2 - 10.3762/bjnano.9.178

DO - 10.3762/bjnano.9.178

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VL - 9

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JO - Beilstein Journal of Nanotechnology

JF - Beilstein Journal of Nanotechnology

SN - 2190-4286

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