Electrical characterization of InGaAs ultra-shallow junctions

Dirch Hjorth Petersen, Ole Hansen, Peter Bøggild, Rong Lin, P.F. Nielsen, D. Lin, C. Adelmann, A. Alian, C. Merckling, J. Penaud, G. Brammertz, J. Goossens, W. Vandervorst, T. Clarysse

    Research output: Contribution to journalJournal articleResearchpeer-review


    In this study, we investigate the limitations to sheet resistance and Hall effect characterization of ultra-shallow junctions (USJs) in In0.53Ga0.47As. We compare conventional van der Pauw and Hall effect measurements with micro four-point probe (M4PP) and micro Hall effect methods. Due to the high carrier mobility of InGaAs, we extend the micro-Hall effect position error suppression method to also take geometrical magnetoresistance into account. We find that the conventional techniques fail to measure accurately on n(++)/p(+) USJ due to a significant leakage current, whereas the M4PP and micro Hall effect methods are able to give accurate results. Finally, we observe a significant reduction in the carrier mobility for InGaAs USJ.
    Original languageEnglish
    JournalJournal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures
    Issue number1
    Pages (from-to)C1C41-C1C47
    Publication statusPublished - 2010


    • III-V semiconductors
    • gallium arsenide
    • leakage currents
    • semiconductor thin films
    • Hall effect
    • indium compounds
    • magnetoresistance
    • carrier mobility


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