Electrical Characteristics of InSe-based Field-effect Transistors

Tsung Pin Lu; Ming Xian Loi; Ji Jhih Yeh; Ambika Subramanian; Pin Hsi Chiu; Cheng Han Wu; Hao Wei Liu; Rajesh Kumar Ulaganathan; Chang Yu Lin

doi:10.1109/ICASI55125.2022.9774485

Electrical Characteristics of InSe-based Field-effect Transistors

Tsung Pin Lu, Ming Xian Loi, Ji Jhih Yeh, Ambika Subramanian, Pin Hsi Chiu, Cheng Han Wu, Hao Wei Liu, Rajesh Kumar Ulaganathan, Chang Yu Lin^*

^*Corresponding author for this work

Chung Yuan Christian University

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

To understand and optimize the eletrical properties of two-dimensional (2D) Van der Waals material is crucial since the thickness of the material can substantially affect the field of 2D material based eletronic devices and other applications. The main objective of this study is to investigate the most important parameters for examing the performance of FETs, carrier mobility () and threshold voltage (Vth) of indium selenide (InSe) based field-effect transistor. We believe that analyzing the thickness of 2D materials is essential for the performance enhancement of FETs in a variety of electronic and optoelectronic applications. We hope this result can be assisted in performance enhancement of complementary metal-oxide-semiconductor (CMOS) inverter and logic circuit applications.

Original language	English
Title of host publication	Proceedings of the 8^th International Conference on Applied System Innovation
Editors	Shoou-Jinn Chang, Sheng-Joue Young, Artde Donald Kin-Tak Lam, Liang-Wen Ji, Stephen D. Prior
Publisher	IEEE
Publication date	2022
Pages	205-206
ISBN (Electronic)	9781665496506
DOIs	https://doi.org/10.1109/ICASI55125.2022.9774485
Publication status	Published - 2022
Event	8^th International Conference on Applied System Innovation - Fuli Hot Spring Resort, Nantou, Taiwan, Province of China Duration: 21 Apr 2022 → 23 Apr 2022

Conference

Conference	8^th International Conference on Applied System Innovation
Location	Fuli Hot Spring Resort
Country/Territory	Taiwan, Province of China
City	Nantou
Period	21/04/2022 → 23/04/2022

Series	Proceedings of the 2022 8th International Conference on Applied System Innovation, ICASI 2022

Keywords

2D materials
Field-Effect Transistors

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10.1109/ICASI55125.2022.9774485

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Lu, T. P., Loi, M. X., Yeh, J. J., Subramanian, A., Chiu, P. H., Wu, C. H., Liu, H. W., Ulaganathan, R. K., & Lin, C. Y. (2022). Electrical Characteristics of InSe-based Field-effect Transistors. In S.-J. Chang, S.-J. Young, A. D. K.-T. Lam, L.-W. Ji, & S. D. Prior (Eds.), Proceedings of the 8^th International Conference on Applied System Innovation (pp. 205-206). IEEE. https://doi.org/10.1109/ICASI55125.2022.9774485

Lu, Tsung Pin ; Loi, Ming Xian ; Yeh, Ji Jhih et al. / Electrical Characteristics of InSe-based Field-effect Transistors. Proceedings of the 8^th International Conference on Applied System Innovation. editor / Shoou-Jinn Chang ; Sheng-Joue Young ; Artde Donald Kin-Tak Lam ; Liang-Wen Ji ; Stephen D. Prior. IEEE, 2022. pp. 205-206 (Proceedings of the 2022 8th International Conference on Applied System Innovation, ICASI 2022).

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title = "Electrical Characteristics of InSe-based Field-effect Transistors",

abstract = "To understand and optimize the eletrical properties of two-dimensional (2D) Van der Waals material is crucial since the thickness of the material can substantially affect the field of 2D material based eletronic devices and other applications. The main objective of this study is to investigate the most important parameters for examing the performance of FETs, carrier mobility () and threshold voltage (Vth) of indium selenide (InSe) based field-effect transistor. We believe that analyzing the thickness of 2D materials is essential for the performance enhancement of FETs in a variety of electronic and optoelectronic applications. We hope this result can be assisted in performance enhancement of complementary metal-oxide-semiconductor (CMOS) inverter and logic circuit applications. ",

keywords = "2D materials, Field-Effect Transistors",

author = "Lu, {Tsung Pin} and Loi, {Ming Xian} and Yeh, {Ji Jhih} and Ambika Subramanian and Chiu, {Pin Hsi} and Wu, {Cheng Han} and Liu, {Hao Wei} and Ulaganathan, {Rajesh Kumar} and Lin, {Chang Yu}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 8<sup>th</sup> International Conference on Applied System Innovation, ICASI 2022 ; Conference date: 21-04-2022 Through 23-04-2022",

year = "2022",

doi = "10.1109/ICASI55125.2022.9774485",

language = "English",

series = "Proceedings of the 2022 8th International Conference on Applied System Innovation, ICASI 2022",

pages = "205--206",

editor = "Shoou-Jinn Chang and Sheng-Joue Young and Lam, {Artde Donald Kin-Tak} and Liang-Wen Ji and Prior, {Stephen D.}",

booktitle = "Proceedings of the 8th International Conference on Applied System Innovation",

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Lu, TP, Loi, MX, Yeh, JJ, Subramanian, A, Chiu, PH, Wu, CH, Liu, HW, Ulaganathan, RK & Lin, CY 2022, Electrical Characteristics of InSe-based Field-effect Transistors. in S-J Chang, S-J Young, ADK-T Lam, L-W Ji & SD Prior (eds), Proceedings of the 8^th International Conference on Applied System Innovation. IEEE, Proceedings of the 2022 8th International Conference on Applied System Innovation, ICASI 2022, pp. 205-206, 8^th International Conference on Applied System Innovation, Nantou, Taiwan, Province of China, 21/04/2022. https://doi.org/10.1109/ICASI55125.2022.9774485

Electrical Characteristics of InSe-based Field-effect Transistors. / Lu, Tsung Pin; Loi, Ming Xian; Yeh, Ji Jhih et al.
Proceedings of the 8^th International Conference on Applied System Innovation. ed. / Shoou-Jinn Chang; Sheng-Joue Young; Artde Donald Kin-Tak Lam; Liang-Wen Ji; Stephen D. Prior. IEEE, 2022. p. 205-206 (Proceedings of the 2022 8th International Conference on Applied System Innovation, ICASI 2022).

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Electrical Characteristics of InSe-based Field-effect Transistors

AU - Lu, Tsung Pin

AU - Loi, Ming Xian

AU - Yeh, Ji Jhih

AU - Subramanian, Ambika

AU - Chiu, Pin Hsi

AU - Wu, Cheng Han

AU - Liu, Hao Wei

AU - Ulaganathan, Rajesh Kumar

AU - Lin, Chang Yu

PY - 2022

Y1 - 2022

N2 - To understand and optimize the eletrical properties of two-dimensional (2D) Van der Waals material is crucial since the thickness of the material can substantially affect the field of 2D material based eletronic devices and other applications. The main objective of this study is to investigate the most important parameters for examing the performance of FETs, carrier mobility () and threshold voltage (Vth) of indium selenide (InSe) based field-effect transistor. We believe that analyzing the thickness of 2D materials is essential for the performance enhancement of FETs in a variety of electronic and optoelectronic applications. We hope this result can be assisted in performance enhancement of complementary metal-oxide-semiconductor (CMOS) inverter and logic circuit applications.

AB - To understand and optimize the eletrical properties of two-dimensional (2D) Van der Waals material is crucial since the thickness of the material can substantially affect the field of 2D material based eletronic devices and other applications. The main objective of this study is to investigate the most important parameters for examing the performance of FETs, carrier mobility () and threshold voltage (Vth) of indium selenide (InSe) based field-effect transistor. We believe that analyzing the thickness of 2D materials is essential for the performance enhancement of FETs in a variety of electronic and optoelectronic applications. We hope this result can be assisted in performance enhancement of complementary metal-oxide-semiconductor (CMOS) inverter and logic circuit applications.

KW - 2D materials

KW - Field-Effect Transistors

U2 - 10.1109/ICASI55125.2022.9774485

DO - 10.1109/ICASI55125.2022.9774485

M3 - Article in proceedings

AN - SCOPUS:85130943864

T3 - Proceedings of the 2022 8th International Conference on Applied System Innovation, ICASI 2022

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BT - Proceedings of the 8th International Conference on Applied System Innovation

A2 - Chang, Shoou-Jinn

A2 - Young, Sheng-Joue

A2 - Lam, Artde Donald Kin-Tak

A2 - Ji, Liang-Wen

A2 - Prior, Stephen D.

PB - IEEE

T2 - 8<sup>th</sup> International Conference on Applied System Innovation

Y2 - 21 April 2022 through 23 April 2022

ER -

Lu TP, Loi MX, Yeh JJ, Subramanian A, Chiu PH, Wu CH et al. Electrical Characteristics of InSe-based Field-effect Transistors. In Chang SJ, Young SJ, Lam ADKT, Ji LW, Prior SD, editors, Proceedings of the 8^th International Conference on Applied System Innovation. IEEE. 2022. p. 205-206. (Proceedings of the 2022 8th International Conference on Applied System Innovation, ICASI 2022). doi: 10.1109/ICASI55125.2022.9774485

Electrical Characteristics of InSe-based Field-effect Transistors

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