Electrical Breakdown of Nanowires

Jiong Zhao; Hongyu Sun; Sheng Dai; Yan Wang; Jing Zhu

doi:10.1021/nl202160c

Electrical Breakdown of Nanowires

Jiong Zhao
, Hongyu Sun
, Sheng Dai
, Yan Wang
, Jing Zhu

Tsinghua University

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Instantaneous electrical breakdown measurements of GaN and Ag nanowires are performed by an in situ transmission electron microscopy method. Our results directly reveal the mechanism that typical thermally heated semiconductor nanowires break at the midpoint, while metallic nanowires breakdown near the two ends due to the stress induced by electromigration. The different breakdown mechanisms for the nanowires are caused by the different thermal and electrical properties of the materials.

Original language	English
Journal	Nano Letters
Volume	11
Issue number	11
Pages (from-to)	4647-4651
Number of pages	5
ISSN	1530-6984
DOIs	https://doi.org/10.1021/nl202160c
Publication status	Published - 2011
Externally published	Yes

Keywords

Nanowires
Electrical breakdown
Joule heating
Electromigration

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10.1021/nl202160c

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title = "Electrical Breakdown of Nanowires",

abstract = "Instantaneous electrical breakdown measurements of GaN and Ag nanowires are performed by an in situ transmission electron microscopy method. Our results directly reveal the mechanism that typical thermally heated semiconductor nanowires break at the midpoint, while metallic nanowires breakdown near the two ends due to the stress induced by electromigration. The different breakdown mechanisms for the nanowires are caused by the different thermal and electrical properties of the materials.",

keywords = "Nanowires, Electrical breakdown, Joule heating, Electromigration",

author = "Jiong Zhao and Hongyu Sun and Sheng Dai and Yan Wang and Jing Zhu",

year = "2011",

doi = "10.1021/nl202160c",

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TY - JOUR

T1 - Electrical Breakdown of Nanowires

AU - Zhao, Jiong

AU - Sun, Hongyu

AU - Dai, Sheng

AU - Wang, Yan

AU - Zhu, Jing

PY - 2011

Y1 - 2011

N2 - Instantaneous electrical breakdown measurements of GaN and Ag nanowires are performed by an in situ transmission electron microscopy method. Our results directly reveal the mechanism that typical thermally heated semiconductor nanowires break at the midpoint, while metallic nanowires breakdown near the two ends due to the stress induced by electromigration. The different breakdown mechanisms for the nanowires are caused by the different thermal and electrical properties of the materials.

AB - Instantaneous electrical breakdown measurements of GaN and Ag nanowires are performed by an in situ transmission electron microscopy method. Our results directly reveal the mechanism that typical thermally heated semiconductor nanowires break at the midpoint, while metallic nanowires breakdown near the two ends due to the stress induced by electromigration. The different breakdown mechanisms for the nanowires are caused by the different thermal and electrical properties of the materials.

KW - Nanowires

KW - Electrical breakdown

KW - Joule heating

KW - Electromigration

U2 - 10.1021/nl202160c

DO - 10.1021/nl202160c

M3 - Journal article

C2 - 21967081

SN - 1530-6984

VL - 11

SP - 4647

EP - 4651

JO - Nano Letters

JF - Nano Letters

IS - 11

ER -

Electrical Breakdown of Nanowires

Abstract

Keywords

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