Electrical and thermal characterization of single and multi-finger InP DHBTs

Virginio Midili, V. Nodjiadjim, Tom Keinicke Johansen, M. Riet, J.Y. Dupuy, A. Konczykowska, Michele Squartecchia

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Abstract

This paper presents the characterization of single and multi-finger Indium Phosphide Double Heterojunction Bipolar transistors (InP DHBTs). It is used as the starting point for technology optimization. Safe Operating Area (SOA) and small signal AC parameters are investigated along with thermal characteristics. The results are presented comparing different device dimensions and number of fingers. This work gives directions towards further optimization of geometrical parameters and reduction of thermal effects.
Original languageEnglish
Title of host publicationProceedings of 2015 10th European Microwave Integrated Circuits Conference
PublisherIEEE
Publication date2015
Pages148-151
ISBN (Print)9782874870408
DOIs
Publication statusPublished - 2015
Event2015 10th European Microwave Integrated Circuits Conference - Paris, France
Duration: 7 Sep 20158 Sep 2015

Conference

Conference2015 10th European Microwave Integrated Circuits Conference
CountryFrance
CityParis
Period07/09/201508/09/2015

Keywords

  • Aerospace
  • Components, Circuits, Devices and Systems
  • Engineered Materials, Dielectrics and Plasmas
  • Fields, Waves and Electromagnetics
  • Photonics and Electrooptics

Cite this

Midili, V., Nodjiadjim, V., Johansen, T. K., Riet, M., Dupuy, J. Y., Konczykowska, A., & Squartecchia, M. (2015). Electrical and thermal characterization of single and multi-finger InP DHBTs. In Proceedings of 2015 10th European Microwave Integrated Circuits Conference (pp. 148-151). IEEE. https://doi.org/10.1109/EuMIC.2015.7345090