Electric field effects in scanning tunneling microscope imaging.

Kurt Stokbro; Ulrich Quaade; Francois Grey

doi:10.1007/s003390051265

Electric field effects in scanning tunneling microscope imaging.

Kurt Stokbro
, Ulrich Quaade
, Francois Grey

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

We present a high-voltage extension of the Tersoff-Hamann theory of scanning tunneling microscope (STM) images, which includes the effect of the electric field between the tip and the sample. The theoretical model is based on first-principles electronic structure calculations and has no adjustable parameters. We use the method to calculate theoretical STM images of the monohydrate Si(100)-H(2x1) surface with missing hydrogen defects at -2V and find an enhanced corrugation due to the electric field, in good agreement with experimental images.

Original language	English
Journal	Applied Physics A: Materials Science & Processing
Volume	66
Issue number	7
Pages (from-to)	S907-S910
ISSN	0947-8396
DOIs	https://doi.org/10.1007/s003390051265
Publication status	Published - 1998

Access to Document

10.1007/s003390051265

OpenUrl availability

Check availability in DTU Findit

Cite this

@article{8719eb1e5b9349e0a0539fbfcbce3f3f,

title = "Electric field effects in scanning tunneling microscope imaging.",

abstract = "We present a high-voltage extension of the Tersoff-Hamann theory of scanning tunneling microscope (STM) images, which includes the effect of the electric field between the tip and the sample. The theoretical model is based on first-principles electronic structure calculations and has no adjustable parameters. We use the method to calculate theoretical STM images of the monohydrate Si(100)-H(2x1) surface with missing hydrogen defects at -2V and find an enhanced corrugation due to the electric field, in good agreement with experimental images. ",

author = "Kurt Stokbro and Ulrich Quaade and Francois Grey",

year = "1998",

doi = "10.1007/s003390051265",

language = "English",

volume = "66",

pages = "S907--S910",

journal = "Applied Physics A: Materials Science \& Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

number = "7",

}

TY - JOUR

T1 - Electric field effects in scanning tunneling microscope imaging.

AU - Stokbro, Kurt

AU - Quaade, Ulrich

AU - Grey, Francois

PY - 1998

Y1 - 1998

N2 - We present a high-voltage extension of the Tersoff-Hamann theory of scanning tunneling microscope (STM) images, which includes the effect of the electric field between the tip and the sample. The theoretical model is based on first-principles electronic structure calculations and has no adjustable parameters. We use the method to calculate theoretical STM images of the monohydrate Si(100)-H(2x1) surface with missing hydrogen defects at -2V and find an enhanced corrugation due to the electric field, in good agreement with experimental images.

AB - We present a high-voltage extension of the Tersoff-Hamann theory of scanning tunneling microscope (STM) images, which includes the effect of the electric field between the tip and the sample. The theoretical model is based on first-principles electronic structure calculations and has no adjustable parameters. We use the method to calculate theoretical STM images of the monohydrate Si(100)-H(2x1) surface with missing hydrogen defects at -2V and find an enhanced corrugation due to the electric field, in good agreement with experimental images.

U2 - 10.1007/s003390051265

DO - 10.1007/s003390051265

M3 - Journal article

SN - 0947-8396

VL - 66

SP - S907-S910

JO - Applied Physics A: Materials Science & Processing

JF - Applied Physics A: Materials Science & Processing

IS - 7

ER -

Electric field effects in scanning tunneling microscope imaging.

Abstract

Access to Document

OpenUrl availability

Fingerprint

Cite this