Electric field effects in scanning tunneling microscope imaging.

Kurt Stokbro; Ulrich Quaade; Francois Grey

doi:10.1007/s003390051265

Electric field effects in scanning tunneling microscope imaging.

Kurt Stokbro, Ulrich Quaade, Francois Grey

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

We present a high-voltage extension of the Tersoff-Hamann theory of scanning tunneling microscope (STM) images, which includes the effect of the electric field between the tip and the sample. The theoretical model is based on first-principles electronic structure calculations and has no adjustable parameters. We use the method to calculate theoretical STM images of the monohydrate Si(100)-H(2x1) surface with missing hydrogen defects at -2V and find an enhanced corrugation due to the electric field, in good agreement with experimental images.

Original language	English
Journal	Applied Physics A: Materials Science & Processing
Volume	66
Issue number	7
Pages (from-to)	S907-S910
ISSN	0947-8396
DOIs	https://doi.org/10.1007/s003390051265
Publication status	Published - 1998

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title = "Electric field effects in scanning tunneling microscope imaging.",

abstract = "We present a high-voltage extension of the Tersoff-Hamann theory of scanning tunneling microscope (STM) images, which includes the effect of the electric field between the tip and the sample. The theoretical model is based on first-principles electronic structure calculations and has no adjustable parameters. We use the method to calculate theoretical STM images of the monohydrate Si(100)-H(2x1) surface with missing hydrogen defects at -2V and find an enhanced corrugation due to the electric field, in good agreement with experimental images. ",

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T1 - Electric field effects in scanning tunneling microscope imaging.

AU - Stokbro, Kurt

AU - Quaade, Ulrich

AU - Grey, Francois

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AB - We present a high-voltage extension of the Tersoff-Hamann theory of scanning tunneling microscope (STM) images, which includes the effect of the electric field between the tip and the sample. The theoretical model is based on first-principles electronic structure calculations and has no adjustable parameters. We use the method to calculate theoretical STM images of the monohydrate Si(100)-H(2x1) surface with missing hydrogen defects at -2V and find an enhanced corrugation due to the electric field, in good agreement with experimental images.

U2 - 10.1007/s003390051265

DO - 10.1007/s003390051265

M3 - Journal article

SN - 0947-8396

VL - 66

SP - S907-S910

JO - Applied Physics A: Materials Science & Processing

JF - Applied Physics A: Materials Science & Processing

IS - 7

ER -

Electric field effects in scanning tunneling microscope imaging.

Abstract

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