Electric field control of the γ-Al2O3/SrTiO3 interface conductivity at room temperature

Dennis Valbjørn Christensen, Felix Trier, Merlin von Soosten, G. E. D. K. Prawiroatmodjo, T. S. Jespersen, Yunzhong Chen, Nini Pryds

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Controlling interfaces using electric fields is at the heart of modern electronics. The discovery of the conducting interface between the two insulating oxides LaAlO3 (LAO) and SrTiO3 (STO) has led to a number of interesting electric field-dependent phenomena. Recently, it was shown that replacing LAO with a spinel γ-Al2O3 (GAO) allows a good pseudo-epitaxial film growth and high electron mobility at low temperatures. Here, we show that the GAO/STO interface resistance, similar to LAO/STO, can be tuned by orders of magnitude at room temperature using the electric field of a backgate. The resistance change is non-volatile, bipolar, and can be tuned continuously rather than being a simple on/off switch. Exposure to light significantly changes the capabilities to tune the interface resistance. High- and low-resistive states are obtained by annihilation and creation, respectively, of free n-type carriers, and we speculate that electromigration of oxygen vacancies is the origin of the tunability.
Original languageEnglish
Article number021602
JournalApplied Physics Letters
Volume109
Issue number2
Number of pages4
ISSN0003-6951
DOIs
Publication statusPublished - 2016

Keywords

  • Magnetization reversals
  • Electric fields
  • Vacancies
  • Electrical resistivity
  • Heterojunctions

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