Efficient Modeling of Coulomb Interaction Effect on Exciton in Crystal-Phase Nanowire Quantum Dot

Masoomeh Taherkhani; Niels Gregersen; Jesper Mørk; D. McCutcheon; Morten Willatzen

doi:10.1109/NUSOD.2016.7547003

Efficient Modeling of Coulomb Interaction Effect on Exciton in Crystal-Phase Nanowire Quantum Dot

Masoomeh Taherkhani, Niels Gregersen, Jesper Mørk, D. McCutcheon, Morten Willatzen

University of Bristol

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

The binding energy and oscillation strength of the ground-state exciton in type-II quantum dot (QD) is calculated by using a post Hartree-Fock method known as the configuration interaction (CI) method which is significantly more efficient than conventional methods like ab initio method. We show that the Coulomb interaction between electron and holes in these structures considerably affects the transition dipole moment which is the key parameter of optical quantum gating in STIRAP (stimulated Raman adiabatic passage) process for implementing quantum gates [1], [2].

Original language	English
Title of host publication	Proceedings of the 16th International Conference on Numerical Simulation of Optoelectronic Devices
Number of pages	2
Publisher	IEEE
Publication date	2016
ISBN (Print)	9781467386036
DOIs	https://doi.org/10.1109/NUSOD.2016.7547003
Publication status	Published - 2016
Event	16th International Conference on Numerical Simulation of Optoelectronic Devices - Sydney, Australia Duration: 11 Jul 2016 → 15 Jul 2016 Conference number: 16

Conference

Conference	16th International Conference on Numerical Simulation of Optoelectronic Devices
Number	16
Country/Territory	Australia
City	Sydney
Period	11/07/2016 → 15/07/2016

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10.1109/NUSOD.2016.7547003

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title = "Efficient Modeling of Coulomb Interaction Effect on Exciton in Crystal-Phase Nanowire Quantum Dot",

abstract = "The binding energy and oscillation strength of the ground-state exciton in type-II quantum dot (QD) is calculated by using a post Hartree-Fock method known as the configuration interaction (CI) method which is significantly more efficient than conventional methods like ab initio method. We show that the Coulomb interaction between electron and holes in these structures considerably affects the transition dipole moment which is the key parameter of optical quantum gating in STIRAP (stimulated Raman adiabatic passage) process for implementing quantum gates [1], [2].",

author = "Masoomeh Taherkhani and Niels Gregersen and Jesper M{\o}rk and D. McCutcheon and Morten Willatzen",

year = "2016",

doi = "10.1109/NUSOD.2016.7547003",

language = "English",

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booktitle = "Proceedings of the 16th International Conference on Numerical Simulation of Optoelectronic Devices",

publisher = "IEEE",

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note = "16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016 ; Conference date: 11-07-2016 Through 15-07-2016",

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Taherkhani, M, Gregersen, N , Mørk, J, McCutcheon, D & Willatzen, M 2016, Efficient Modeling of Coulomb Interaction Effect on Exciton in Crystal-Phase Nanowire Quantum Dot. in Proceedings of the 16th International Conference on Numerical Simulation of Optoelectronic Devices. IEEE, 16th International Conference on Numerical Simulation of Optoelectronic Devices, Sydney, Australia, 11/07/2016. https://doi.org/10.1109/NUSOD.2016.7547003

Efficient Modeling of Coulomb Interaction Effect on Exciton in Crystal-Phase Nanowire Quantum Dot. / Taherkhani, Masoomeh; Gregersen, Niels ; Mørk, Jesper et al.
Proceedings of the 16th International Conference on Numerical Simulation of Optoelectronic Devices. IEEE, 2016.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Efficient Modeling of Coulomb Interaction Effect on Exciton in Crystal-Phase Nanowire Quantum Dot

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AU - Willatzen, Morten

N1 - Conference code: 16

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N2 - The binding energy and oscillation strength of the ground-state exciton in type-II quantum dot (QD) is calculated by using a post Hartree-Fock method known as the configuration interaction (CI) method which is significantly more efficient than conventional methods like ab initio method. We show that the Coulomb interaction between electron and holes in these structures considerably affects the transition dipole moment which is the key parameter of optical quantum gating in STIRAP (stimulated Raman adiabatic passage) process for implementing quantum gates [1], [2].

AB - The binding energy and oscillation strength of the ground-state exciton in type-II quantum dot (QD) is calculated by using a post Hartree-Fock method known as the configuration interaction (CI) method which is significantly more efficient than conventional methods like ab initio method. We show that the Coulomb interaction between electron and holes in these structures considerably affects the transition dipole moment which is the key parameter of optical quantum gating in STIRAP (stimulated Raman adiabatic passage) process for implementing quantum gates [1], [2].

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DO - 10.1109/NUSOD.2016.7547003

M3 - Article in proceedings

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BT - Proceedings of the 16th International Conference on Numerical Simulation of Optoelectronic Devices

PB - IEEE

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Y2 - 11 July 2016 through 15 July 2016

ER -

Efficient Modeling of Coulomb Interaction Effect on Exciton in Crystal-Phase Nanowire Quantum Dot

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