Efficient Modeling of Coulomb Interaction Effect on Exciton in Crystal-Phase Nanowire Quantum Dot

Masoomeh Taherkhani, Niels Gregersen, Jesper Mørk, D. McCutcheon, Morten Willatzen

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

The binding energy and oscillation strength of the ground-state exciton in type-II quantum dot (QD) is calculated by using a post Hartree-Fock method known as the configuration interaction (CI) method which is significantly more efficient than conventional methods like ab initio method. We show that the Coulomb interaction between electron and holes in these structures considerably affects the transition dipole moment which is the key parameter of optical quantum gating in STIRAP (stimulated Raman adiabatic passage) process for implementing quantum gates [1], [2].
Original languageEnglish
Title of host publicationProceedings of the 16th International Conference on Numerical Simulation of Optoelectronic Devices
Number of pages2
PublisherIEEE
Publication date2016
ISBN (Print)9781467386036
DOIs
Publication statusPublished - 2016
Event16th International Conference on Numerical Simulation of Optoelectronic Devices - Sydney, Australia
Duration: 11 Jul 201615 Jul 2016

Conference

Conference16th International Conference on Numerical Simulation of Optoelectronic Devices
CountryAustralia
CitySydney
Period11/07/201615/07/2016

Cite this

Taherkhani, M., Gregersen, N., Mørk, J., McCutcheon, D., & Willatzen, M. (2016). Efficient Modeling of Coulomb Interaction Effect on Exciton in Crystal-Phase Nanowire Quantum Dot. In Proceedings of the 16th International Conference on Numerical Simulation of Optoelectronic Devices IEEE. https://doi.org/10.1109/NUSOD.2016.7547003
Taherkhani, Masoomeh ; Gregersen, Niels ; Mørk, Jesper ; McCutcheon, D. ; Willatzen, Morten. / Efficient Modeling of Coulomb Interaction Effect on Exciton in Crystal-Phase Nanowire Quantum Dot. Proceedings of the 16th International Conference on Numerical Simulation of Optoelectronic Devices. IEEE, 2016.
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title = "Efficient Modeling of Coulomb Interaction Effect on Exciton in Crystal-Phase Nanowire Quantum Dot",
abstract = "The binding energy and oscillation strength of the ground-state exciton in type-II quantum dot (QD) is calculated by using a post Hartree-Fock method known as the configuration interaction (CI) method which is significantly more efficient than conventional methods like ab initio method. We show that the Coulomb interaction between electron and holes in these structures considerably affects the transition dipole moment which is the key parameter of optical quantum gating in STIRAP (stimulated Raman adiabatic passage) process for implementing quantum gates [1], [2].",
author = "Masoomeh Taherkhani and Niels Gregersen and Jesper M{\o}rk and D. McCutcheon and Morten Willatzen",
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Taherkhani, M, Gregersen, N, Mørk, J, McCutcheon, D & Willatzen, M 2016, Efficient Modeling of Coulomb Interaction Effect on Exciton in Crystal-Phase Nanowire Quantum Dot. in Proceedings of the 16th International Conference on Numerical Simulation of Optoelectronic Devices. IEEE, 16th International Conference on Numerical Simulation of Optoelectronic Devices, Sydney, Australia, 11/07/2016. https://doi.org/10.1109/NUSOD.2016.7547003

Efficient Modeling of Coulomb Interaction Effect on Exciton in Crystal-Phase Nanowire Quantum Dot. / Taherkhani, Masoomeh; Gregersen, Niels; Mørk, Jesper; McCutcheon, D.; Willatzen, Morten.

Proceedings of the 16th International Conference on Numerical Simulation of Optoelectronic Devices. IEEE, 2016.

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

TY - GEN

T1 - Efficient Modeling of Coulomb Interaction Effect on Exciton in Crystal-Phase Nanowire Quantum Dot

AU - Taherkhani, Masoomeh

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AU - McCutcheon, D.

AU - Willatzen, Morten

PY - 2016

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N2 - The binding energy and oscillation strength of the ground-state exciton in type-II quantum dot (QD) is calculated by using a post Hartree-Fock method known as the configuration interaction (CI) method which is significantly more efficient than conventional methods like ab initio method. We show that the Coulomb interaction between electron and holes in these structures considerably affects the transition dipole moment which is the key parameter of optical quantum gating in STIRAP (stimulated Raman adiabatic passage) process for implementing quantum gates [1], [2].

AB - The binding energy and oscillation strength of the ground-state exciton in type-II quantum dot (QD) is calculated by using a post Hartree-Fock method known as the configuration interaction (CI) method which is significantly more efficient than conventional methods like ab initio method. We show that the Coulomb interaction between electron and holes in these structures considerably affects the transition dipole moment which is the key parameter of optical quantum gating in STIRAP (stimulated Raman adiabatic passage) process for implementing quantum gates [1], [2].

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M3 - Article in proceedings

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BT - Proceedings of the 16th International Conference on Numerical Simulation of Optoelectronic Devices

PB - IEEE

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Taherkhani M, Gregersen N, Mørk J, McCutcheon D, Willatzen M. Efficient Modeling of Coulomb Interaction Effect on Exciton in Crystal-Phase Nanowire Quantum Dot. In Proceedings of the 16th International Conference on Numerical Simulation of Optoelectronic Devices. IEEE. 2016 https://doi.org/10.1109/NUSOD.2016.7547003