Efficiency Investigations of a 3 kW T-Type Inverter for Switching Frequencies up to 100 kHz

Alexander Anthon, Zhe Zhang, Michael A. E. Andersen, Toke Franke

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

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    Abstract

    This paper deals with a 3kW multilevel inverter used for PV applications. A comparison has been made based on simulations using IGBTs and SiC MOSFETs to see how much efficiency can be gained when SiC diodes are used. A prototype with the same IGBTs and SiC MOSFETs has been built but using regular soft-recovery Si diodes instead of SiC diodes. Efficiencies and switching transitions for different switching frequencies up to 100 kHz have been measured. Thermal investigations of both IGBTs and SiC MOSFETs have been conducted to analyze the
    feasibility of increased switching frequencies. When SiC MOSFETs are used in combination with Si diodes, switching frequencies could be doubled achieving the same efficiencies than the IGBT converter.
    Original languageEnglish
    Title of host publicationProceedings of the 2014 International Power Electronics Conference
    PublisherIEEE
    Publication date2014
    Pages78-83
    DOIs
    Publication statusPublished - 2014
    Event2014 International Power Electronics Conference - Hiroshima, Japan
    Duration: 18 May 201421 May 2014

    Conference

    Conference2014 International Power Electronics Conference
    Country/TerritoryJapan
    CityHiroshima
    Period18/05/201421/05/2014

    Keywords

    • SiC MOSFET
    • IGBT
    • Multilevel inverter
    • Reverse recovery current

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