Efficiency Evaluation on a CoolMos Switching and IGBT Conducting Multilevel Inverter

Alexander Anthon; Zhe Zhang; Michael A. E. Andersen; Toke Franke

doi:10.1109/APEC.2015.7104662

Efficiency Evaluation on a CoolMos Switching and IGBT Conducting Multilevel Inverter

Alexander Anthon, Zhe Zhang, Michael A. E. Andersen, Toke Franke

Danfoss Silicon Power GmbH

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

This paper deals with a three-level inverter topology in the 3 kW range as an alternative to commonly used three-level topologies. The topology is attractive for having low switching losses due to the utilization of CoolMos switching devices while keeping conduction losses low due to the utilization of IGBTs. A proper time delay between the CoolMos and IGBT devices increases the efficiency by 0.2%. Maximum efficiencies of 97.7 % are achieved and less than 0.2 % efficiency degradation is possible with doubled switching frequency. The case temperatures of the switching devices are below 60 ◦C at full power

Original language	English
Title of host publication	Proceedings of APEC 2015
Publisher	IEEE
Publication date	2015
Pages	2251-2255
ISBN (Print)	978-1-4799-6735-3
DOIs	https://doi.org/10.1109/APEC.2015.7104662
Publication status	Published - 2015
Event	30th Applied Power Electronics Conference and Exposition - Charlotte Convention Center, Charlotte, United States Duration: 15 Mar 2015 → 19 Mar 2015

Conference

Conference	30th Applied Power Electronics Conference and Exposition
Location	Charlotte Convention Center
Country/Territory	United States
City	Charlotte
Period	15/03/2015 → 19/03/2015

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10.1109/APEC.2015.7104662

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@inproceedings{a6ef087df1d3422fad568e8809380aa9,

title = "Efficiency Evaluation on a CoolMos Switching and IGBT Conducting Multilevel Inverter",

abstract = "This paper deals with a three-level inverter topology in the 3 kW range as an alternative to commonly used three-level topologies. The topology is attractive for having low switching losses due to the utilization of CoolMos switching devices while keeping conduction losses low due to the utilization of IGBTs. A proper time delay between the CoolMos and IGBT devices increases the efficiency by 0.2%. Maximum efficiencies of 97.7 % are achieved and less than 0.2 % efficiency degradation is possible with doubled switching frequency. The case temperatures of the switching devices are below 60 ◦C at full power",

author = "Alexander Anthon and Zhe Zhang and Andersen, {Michael A. E.} and Toke Franke",

year = "2015",

doi = "10.1109/APEC.2015.7104662",

language = "English",

isbn = "978-1-4799-6735-3",

pages = "2251--2255",

booktitle = "Proceedings of APEC 2015",

publisher = "IEEE",

address = "United States",

note = "30th Applied Power Electronics Conference and Exposition, APEC 2015 ; Conference date: 15-03-2015 Through 19-03-2015",

}

TY - GEN

T1 - Efficiency Evaluation on a CoolMos Switching and IGBT Conducting Multilevel Inverter

AU - Anthon, Alexander

AU - Zhang, Zhe

AU - Andersen, Michael A. E.

AU - Franke, Toke

PY - 2015

Y1 - 2015

N2 - This paper deals with a three-level inverter topology in the 3 kW range as an alternative to commonly used three-level topologies. The topology is attractive for having low switching losses due to the utilization of CoolMos switching devices while keeping conduction losses low due to the utilization of IGBTs. A proper time delay between the CoolMos and IGBT devices increases the efficiency by 0.2%. Maximum efficiencies of 97.7 % are achieved and less than 0.2 % efficiency degradation is possible with doubled switching frequency. The case temperatures of the switching devices are below 60 ◦C at full power

AB - This paper deals with a three-level inverter topology in the 3 kW range as an alternative to commonly used three-level topologies. The topology is attractive for having low switching losses due to the utilization of CoolMos switching devices while keeping conduction losses low due to the utilization of IGBTs. A proper time delay between the CoolMos and IGBT devices increases the efficiency by 0.2%. Maximum efficiencies of 97.7 % are achieved and less than 0.2 % efficiency degradation is possible with doubled switching frequency. The case temperatures of the switching devices are below 60 ◦C at full power

U2 - 10.1109/APEC.2015.7104662

DO - 10.1109/APEC.2015.7104662

M3 - Article in proceedings

SN - 978-1-4799-6735-3

SP - 2251

EP - 2255

BT - Proceedings of APEC 2015

PB - IEEE

T2 - 30th Applied Power Electronics Conference and Exposition

Y2 - 15 March 2015 through 19 March 2015

ER -

Efficiency Evaluation on a CoolMos Switching and IGBT Conducting Multilevel Inverter

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