Efficiency Evaluation on a CoolMos Switching and IGBT Conducting Multilevel Inverter

Alexander Anthon, Zhe Zhang, Michael A. E. Andersen, Toke Franke

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

434 Downloads (Pure)

Abstract

This paper deals with a three-level inverter topology in the 3 kW range as an alternative to commonly used three-level topologies. The topology is attractive for having low switching losses due to the utilization of CoolMos switching devices while keeping conduction losses low due to the utilization of IGBTs. A proper time delay between the CoolMos and IGBT devices increases the efficiency by 0.2%. Maximum efficiencies of 97.7 % are achieved and less than 0.2 % efficiency degradation is possible with doubled switching frequency. The case temperatures of the switching devices are below 60 ◦C at full power
Original languageEnglish
Title of host publicationProceedings of APEC 2015
PublisherIEEE
Publication date2015
Pages2251-2255
ISBN (Print)978-1-4799-6735-3
DOIs
Publication statusPublished - 2015
Event30th Applied Power Electronics Conference and Exposition - Charlotte Convention Center, Charlotte, NC, United States
Duration: 15 Mar 201519 Mar 2015

Conference

Conference30th Applied Power Electronics Conference and Exposition
LocationCharlotte Convention Center
Country/TerritoryUnited States
CityCharlotte, NC
Period15/03/201519/03/2015

Fingerprint

Dive into the research topics of 'Efficiency Evaluation on a CoolMos Switching and IGBT Conducting Multilevel Inverter'. Together they form a unique fingerprint.

Cite this