Efficiency enhancement of InGaN amber MQWs using nanopillar structures

Yiyu Ou; Daisuke Iida; Jin Liu; Kaiyu Wu; Kazuhiro Ohkawa; Anja Boisen; Paul Michael Petersen; Haiyan Ou

doi:10.1515/nanoph-2017-0057

Efficiency enhancement of InGaN amber MQWs using nanopillar structures

Yiyu Ou^*
, Daisuke Iida
, Jin Liu
, Kaiyu Wu
, Kazuhiro Ohkawa
, Anja Boisen
, Paul Michael Petersen
, Haiyan Ou

^*Corresponding author for this work

King Abdullah University of Science and Technology
Sun Yat-Sen University

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.

Original language	English
Journal	Nanophotonics
Volume	7
Issue number	1
Pages (from-to)	317-322
ISSN	2192-8606
DOIs	https://doi.org/10.1515/nanoph-2017-0057
Publication status	Published - 2018

Keywords

InGaN MQWs
Nanopillar
QCSE
Strain relaxation
Light extraction

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title = "Efficiency enhancement of InGaN amber MQWs using nanopillar structures",

abstract = "We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.",

keywords = "InGaN MQWs, Nanopillar, QCSE, Strain relaxation, Light extraction",

author = "Yiyu Ou and Daisuke Iida and Jin Liu and Kaiyu Wu and Kazuhiro Ohkawa and Anja Boisen and Petersen, \{Paul Michael\} and Haiyan Ou",

year = "2018",

doi = "10.1515/nanoph-2017-0057",

language = "English",

volume = "7",

pages = "317--322",

journal = "Nanophotonics",

issn = "2192-8606",

publisher = "John Wiley and Sons Inc.",

number = "1",

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TY - JOUR

T1 - Efficiency enhancement of InGaN amber MQWs using nanopillar structures

AU - Ou, Yiyu

AU - Iida, Daisuke

AU - Liu, Jin

AU - Wu, Kaiyu

AU - Ohkawa, Kazuhiro

AU - Boisen, Anja

AU - Petersen, Paul Michael

AU - Ou, Haiyan

PY - 2018

Y1 - 2018

N2 - We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.

AB - We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.

KW - InGaN MQWs

KW - Nanopillar

KW - QCSE

KW - Strain relaxation

KW - Light extraction

U2 - 10.1515/nanoph-2017-0057

DO - 10.1515/nanoph-2017-0057

M3 - Journal article

SN - 2192-8606

VL - 7

SP - 317

EP - 322

JO - Nanophotonics

JF - Nanophotonics

IS - 1

ER -

Efficiency enhancement of InGaN amber MQWs using nanopillar structures

Abstract

Keywords

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