Efficiency enhancement of InGaN amber MQWs using nanopillar structures

Yiyu Ou*, Daisuke Iida, Jin Liu, Kaiyu Wu, Kazuhiro Ohkawa, Anja Boisen, Paul Michael Petersen, Haiyan Ou

*Corresponding author for this work

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Abstract

We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.
Original languageEnglish
JournalNanophotonics
Volume7
Issue number1
Pages (from-to)317-322
ISSN2192-8606
DOIs
Publication statusPublished - 2018

Keywords

  • InGaN MQWs
  • Nanopillar
  • QCSE
  • Strain relaxation
  • Light extraction

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