Abstract
We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.
| Original language | English |
|---|---|
| Journal | Nanophotonics |
| Volume | 7 |
| Issue number | 1 |
| Pages (from-to) | 317-322 |
| ISSN | 2192-8606 |
| DOIs | |
| Publication status | Published - 2018 |
Keywords
- InGaN MQWs
- Nanopillar
- QCSE
- Strain relaxation
- Light extraction
Cite this
Ou, Y., Iida, D., Liu, J., Wu, K., Ohkawa, K., Boisen, A., Petersen, P. M., & Ou, H. (2018). Efficiency enhancement of InGaN amber MQWs using nanopillar structures. Nanophotonics, 7(1), 317-322. https://doi.org/10.1515/nanoph-2017-0057