Abstract
We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.
Original language | English |
---|---|
Journal | Nanophotonics |
Volume | 7 |
Issue number | 1 |
Pages (from-to) | 317-322 |
ISSN | 2192-8606 |
DOIs | |
Publication status | Published - 2018 |
Keywords
- InGaN MQWs
- Nanopillar
- QCSE
- Strain relaxation
- Light extraction