Effects of Zr Doping on Magnetic and Structural Properties of DyBa2Cu3O 7−δ Thin Films  

Research output: Contribution to journalJournal article – Annual report year: 2018Researchpeer-review

Standard

Effects of Zr Doping on Magnetic and Structural Properties of DyBa2Cu3O 7−δ Thin Films  . / Opata, Yuri Aparecido; Wulff, Anders Christian; Hansen, Jørn Otto Bindslev; Grivel, Jean-Claude.

In: I E E E Transactions on Applied Superconductivity, Vol. 28, No. 4, 8000804, 2018.

Research output: Contribution to journalJournal article – Annual report year: 2018Researchpeer-review

Harvard

APA

CBE

MLA

Vancouver

Author

Bibtex

@article{34d3e6a5ff394f07ad60bb8b37417ca3,
title = "Effects of Zr Doping on Magnetic and Structural Properties of DyBa2Cu3O 7−δ Thin Films  ",
abstract = "DyBa2(Cu 1−x-Zrx )3 O 7−δ thin films (with x = 0.00, 0.02, 0.04, and 0.06) were synthetized using the chemical solution deposition method on single crystalline LaAlO3 substrates. Effects resulting from Zr doping were investigated by means of magnetic and structural measurements. X-ray diffraction analysis demonstrated a strong c-axis orientation in the DyBa 2(Cu1−x -Zrx) 3 O 7−δ thin films, with only minor reflections due to the presence of Dy2 O 3 and BaZrO3 phases. Narrow transitions with Δ Tc ranging from 1 to 2 K for samples with x = 0.00 and 0.06, respectively, were observed in ac magnetic susceptibility curves, where the nondoped sample demonstrated the highest T onsetc of 91.7 K compared to the Zr-doped samples. Critical current densities Jc of the thin films were obtained from magnetization loop measurements with applied magnetic fields up to 6 T and by employing the Bean model. The sampled doped with 4{\%} Zr exhibited the highest J c value (J c = 3.5 MA/cm 2, self-field, 77 K) in the low field range and we, in general, observed that Zr-doped films demonstrated higher values compared to the pure sample. Pinning force plots ( Fp versus B ) reveal a significant improvement over the magnetic field range investigated of the maximum pinning force for Zr-doped samples. We found FMaxp = 1.7 GN/m3 and 3.8 GN/m 3 for pure and 6{\%} Zr samples, respectively. Analysis based on the Dew-Hughes model shows that normal surface pinning is the dominating pinning mechanism.",
keywords = "Superconducting, thin film, Zr-doping, critical current density",
author = "Opata, {Yuri Aparecido} and Wulff, {Anders Christian} and Hansen, {J{\o}rn Otto Bindslev} and Jean-Claude Grivel",
year = "2018",
doi = "10.1109/TASC.2018.2811763",
language = "English",
volume = "28",
journal = "I E E E Transactions on Applied Superconductivity",
issn = "1051-8223",
publisher = "Institute of Electrical and Electronics Engineers",
number = "4",

}

RIS

TY - JOUR

T1 - Effects of Zr Doping on Magnetic and Structural Properties of DyBa2Cu3O 7−δ Thin Films  

AU - Opata, Yuri Aparecido

AU - Wulff, Anders Christian

AU - Hansen, Jørn Otto Bindslev

AU - Grivel, Jean-Claude

PY - 2018

Y1 - 2018

N2 - DyBa2(Cu 1−x-Zrx )3 O 7−δ thin films (with x = 0.00, 0.02, 0.04, and 0.06) were synthetized using the chemical solution deposition method on single crystalline LaAlO3 substrates. Effects resulting from Zr doping were investigated by means of magnetic and structural measurements. X-ray diffraction analysis demonstrated a strong c-axis orientation in the DyBa 2(Cu1−x -Zrx) 3 O 7−δ thin films, with only minor reflections due to the presence of Dy2 O 3 and BaZrO3 phases. Narrow transitions with Δ Tc ranging from 1 to 2 K for samples with x = 0.00 and 0.06, respectively, were observed in ac magnetic susceptibility curves, where the nondoped sample demonstrated the highest T onsetc of 91.7 K compared to the Zr-doped samples. Critical current densities Jc of the thin films were obtained from magnetization loop measurements with applied magnetic fields up to 6 T and by employing the Bean model. The sampled doped with 4% Zr exhibited the highest J c value (J c = 3.5 MA/cm 2, self-field, 77 K) in the low field range and we, in general, observed that Zr-doped films demonstrated higher values compared to the pure sample. Pinning force plots ( Fp versus B ) reveal a significant improvement over the magnetic field range investigated of the maximum pinning force for Zr-doped samples. We found FMaxp = 1.7 GN/m3 and 3.8 GN/m 3 for pure and 6% Zr samples, respectively. Analysis based on the Dew-Hughes model shows that normal surface pinning is the dominating pinning mechanism.

AB - DyBa2(Cu 1−x-Zrx )3 O 7−δ thin films (with x = 0.00, 0.02, 0.04, and 0.06) were synthetized using the chemical solution deposition method on single crystalline LaAlO3 substrates. Effects resulting from Zr doping were investigated by means of magnetic and structural measurements. X-ray diffraction analysis demonstrated a strong c-axis orientation in the DyBa 2(Cu1−x -Zrx) 3 O 7−δ thin films, with only minor reflections due to the presence of Dy2 O 3 and BaZrO3 phases. Narrow transitions with Δ Tc ranging from 1 to 2 K for samples with x = 0.00 and 0.06, respectively, were observed in ac magnetic susceptibility curves, where the nondoped sample demonstrated the highest T onsetc of 91.7 K compared to the Zr-doped samples. Critical current densities Jc of the thin films were obtained from magnetization loop measurements with applied magnetic fields up to 6 T and by employing the Bean model. The sampled doped with 4% Zr exhibited the highest J c value (J c = 3.5 MA/cm 2, self-field, 77 K) in the low field range and we, in general, observed that Zr-doped films demonstrated higher values compared to the pure sample. Pinning force plots ( Fp versus B ) reveal a significant improvement over the magnetic field range investigated of the maximum pinning force for Zr-doped samples. We found FMaxp = 1.7 GN/m3 and 3.8 GN/m 3 for pure and 6% Zr samples, respectively. Analysis based on the Dew-Hughes model shows that normal surface pinning is the dominating pinning mechanism.

KW - Superconducting

KW - thin film

KW - Zr-doping

KW - critical current density

U2 - 10.1109/TASC.2018.2811763

DO - 10.1109/TASC.2018.2811763

M3 - Journal article

VL - 28

JO - I E E E Transactions on Applied Superconductivity

JF - I E E E Transactions on Applied Superconductivity

SN - 1051-8223

IS - 4

M1 - 8000804

ER -