Effects of overheating in a single-electron transistor

A. N. Korotkov, Mogens Rugholm Samuelsen, S. A. Vasenko

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Abstract

Heating of a single-electron transistor (SET) caused by the current flowing through it is considered. The current and the temperature increase should be calculated self-consistently taking into account various paths of the heat drain. Even if there is no heat drain from the central electrode of the SET due to transfer of phonons, the temperature of this electrode remains finite because electron tunneling decreases the temperature difference between the central and outer electrodes. Overheating effects can cause hysteresis in the I-V curve of the SET in the vicinity of the Coulomb blockade threshold. Journal of Applied Physics is copyrighted by The American Institute of Physics.
Original languageEnglish
JournalJournal of Applied Physics
Volume76
Issue number6
Pages (from-to)3623-3631
ISSN0021-8979
DOIs
Publication statusPublished - 1994

Bibliographical note

Copyright (1994) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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