Effects of overheating in a single-electron transistor

A. N. Korotkov; Mogens Rugholm Samuelsen; S. A. Vasenko

doi:10.1063/1.357424

Effects of overheating in a single-electron transistor

A. N. Korotkov, Mogens Rugholm Samuelsen, S. A. Vasenko

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Abstract

Heating of a single-electron transistor (SET) caused by the current flowing through it is considered. The current and the temperature increase should be calculated self-consistently taking into account various paths of the heat drain. Even if there is no heat drain from the central electrode of the SET due to transfer of phonons, the temperature of this electrode remains finite because electron tunneling decreases the temperature difference between the central and outer electrodes. Overheating effects can cause hysteresis in the I-V curve of the SET in the vicinity of the Coulomb blockade threshold. Journal of Applied Physics is copyrighted by The American Institute of Physics.

Original language	English
Journal	Journal of Applied Physics
Volume	76
Issue number	6
Pages (from-to)	3623-3631
ISSN	0021-8979
DOIs	https://doi.org/10.1063/1.357424
Publication status	Published - 1994

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Copyright (1994) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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title = "Effects of overheating in a single-electron transistor",

abstract = "Heating of a single-electron transistor (SET) caused by the current flowing through it is considered. The current and the temperature increase should be calculated self-consistently taking into account various paths of the heat drain. Even if there is no heat drain from the central electrode of the SET due to transfer of phonons, the temperature of this electrode remains finite because electron tunneling decreases the temperature difference between the central and outer electrodes. Overheating effects can cause hysteresis in the I-V curve of the SET in the vicinity of the Coulomb blockade threshold. Journal of Applied Physics is copyrighted by The American Institute of Physics.",

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AU - Samuelsen, Mogens Rugholm

AU - Vasenko, S. A.

N1 - Copyright (1994) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 1994

Y1 - 1994

N2 - Heating of a single-electron transistor (SET) caused by the current flowing through it is considered. The current and the temperature increase should be calculated self-consistently taking into account various paths of the heat drain. Even if there is no heat drain from the central electrode of the SET due to transfer of phonons, the temperature of this electrode remains finite because electron tunneling decreases the temperature difference between the central and outer electrodes. Overheating effects can cause hysteresis in the I-V curve of the SET in the vicinity of the Coulomb blockade threshold. Journal of Applied Physics is copyrighted by The American Institute of Physics.

AB - Heating of a single-electron transistor (SET) caused by the current flowing through it is considered. The current and the temperature increase should be calculated self-consistently taking into account various paths of the heat drain. Even if there is no heat drain from the central electrode of the SET due to transfer of phonons, the temperature of this electrode remains finite because electron tunneling decreases the temperature difference between the central and outer electrodes. Overheating effects can cause hysteresis in the I-V curve of the SET in the vicinity of the Coulomb blockade threshold. Journal of Applied Physics is copyrighted by The American Institute of Physics.

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SP - 3623

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Effects of overheating in a single-electron transistor

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