Effects of film thickness on manganite film-based heterjunctions

W. M.  Lu; A. D.  Wei; J. R. Sun; Yunzhong Chen; B. G. Shen

doi:10.1063/1.3089698

Effects of film thickness on manganite film-based heterjunctions

W. M. Lu, A. D. Wei, J. R. Sun, Yunzhong Chen, B. G. Shen

Chinese Academy of Sciences

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Abstract

Effects of film thickness on interfacial barrier have been studied for the La_0.67Ca_0.33MnO₃/SrTiO₃: Nb and La_0.67Sr_0.33MnO₃/SrTiO₃: Nbjunctions. In addition to the evolution of the transport behavior from electron tunneling to thermionic emission, increase in film thickness from ∼5 to ∼50 nm causes a significant growth of interfacial barrier as revealed by photoresponse experiments, and the maximum change in interfacial barrier is ∼13% for La_0.67Ca_0.33MnO₃/SrTiO₃: Nb and ∼45% for La_0.67Sr_0.33MnO₃/SrTiO₃: Nb. A linear relation between interfacial barrier and lattice constant of the films is further found, which suggests the influence of lattice strains on interfacial barrier. Qualitative explanations are given.

Original language	English
Article number	082506
Journal	Applied Physics Letters
Volume	94
Issue number	8
Number of pages	3
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.3089698
Publication status	Published - 2009
Externally published	Yes

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title = "Effects of film thickness on manganite film-based heterjunctions",

abstract = "Effects of film thickness on interfacial barrier have been studied for the La0.67Ca0.33MnO3/SrTiO3 : Nb and La0.67Sr0.33MnO3/SrTiO3 : Nbjunctions. In addition to the evolution of the transport behavior from electron tunneling to thermionic emission, increase in film thickness from ∼5 to ∼50 nm causes a significant growth of interfacial barrier as revealed by photoresponse experiments, and the maximum change in interfacial barrier is ∼13% for La0.67Ca0.33MnO3/SrTiO3 : Nb and ∼45% for La0.67Sr0.33MnO3/SrTiO3 : Nb. A linear relation between interfacial barrier and lattice constant of the films is further found, which suggests the influence of lattice strains on interfacial barrier. Qualitative explanations are given.",

author = "Lu, {W. M.} and Wei, {A. D.} and Sun, {J. R.} and Yunzhong Chen and Shen, {B. G.}",

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TY - JOUR

T1 - Effects of film thickness on manganite film-based heterjunctions

AU - Lu, W. M.

AU - Wei, A. D.

AU - Sun, J. R.

AU - Chen, Yunzhong

AU - Shen, B. G.

PY - 2009

Y1 - 2009

N2 - Effects of film thickness on interfacial barrier have been studied for the La0.67Ca0.33MnO3/SrTiO3 : Nb and La0.67Sr0.33MnO3/SrTiO3 : Nbjunctions. In addition to the evolution of the transport behavior from electron tunneling to thermionic emission, increase in film thickness from ∼5 to ∼50 nm causes a significant growth of interfacial barrier as revealed by photoresponse experiments, and the maximum change in interfacial barrier is ∼13% for La0.67Ca0.33MnO3/SrTiO3 : Nb and ∼45% for La0.67Sr0.33MnO3/SrTiO3 : Nb. A linear relation between interfacial barrier and lattice constant of the films is further found, which suggests the influence of lattice strains on interfacial barrier. Qualitative explanations are given.

AB - Effects of film thickness on interfacial barrier have been studied for the La0.67Ca0.33MnO3/SrTiO3 : Nb and La0.67Sr0.33MnO3/SrTiO3 : Nbjunctions. In addition to the evolution of the transport behavior from electron tunneling to thermionic emission, increase in film thickness from ∼5 to ∼50 nm causes a significant growth of interfacial barrier as revealed by photoresponse experiments, and the maximum change in interfacial barrier is ∼13% for La0.67Ca0.33MnO3/SrTiO3 : Nb and ∼45% for La0.67Sr0.33MnO3/SrTiO3 : Nb. A linear relation between interfacial barrier and lattice constant of the films is further found, which suggests the influence of lattice strains on interfacial barrier. Qualitative explanations are given.

U2 - 10.1063/1.3089698

DO - 10.1063/1.3089698

M3 - Journal article

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082506

ER -

Effects of film thickness on manganite film-based heterjunctions

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