Effects of film thickness on manganite film-based heterjunctions

W. M. Lu, A. D. Wei, J. R. Sun, Yunzhong Chen, B. G. Shen

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Abstract

Effects of film thickness on interfacial barrier have been studied for the La0.67Ca0.33MnO3/SrTiO: Nb and La0.67Sr0.33MnO3/SrTiO: Nbjunctions. In addition to the evolution of the transport behavior from electron tunneling to thermionic emission, increase in film thickness from ∼5 to ∼50 nm causes a significant growth of interfacial barrier as revealed by photoresponse experiments, and the maximum change in interfacial barrier is ∼13% for La0.67Ca0.33MnO3/SrTiO: Nb and ∼45% for La0.67Sr0.33MnO3/SrTiO: Nb. A linear relation between interfacial barrier and lattice constant of the films is further found, which suggests the influence of lattice strains on interfacial barrier. Qualitative explanations are given.
Original languageEnglish
Article number082506
JournalApplied Physics Letters
Volume94
Issue number8
Number of pages3
ISSN0003-6951
DOIs
Publication statusPublished - 2009
Externally publishedYes

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