Effects of dopant concentration and impurities on the conductivity of magnetron-sputtered nanocrystalline yttria-stabilized zirconia

M. Sillassen, P. Eklund, Nini Pryds, J. Bøttiger

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    Cubic yttria-stabilized zirconia (YSZ) films with yttria concentrations of 8.7, 9.9, and 11 mol% have been deposited by reactive pulsed DC magnetron from Zr–Y alloy targets. The overall microstructure and texture in the films showed no dependence on the yttria concentration. Films deposited at floating potential had a <111> texture. Single-line profile analysis of the 111 X-ray diffraction peak yielded a grain size of 18 nm and a microstrain of 2%, regardless of deposition temperature. Films deposited at 400 °C and selected bias voltages in the range from − 70 V to − 200 V showed a reduced grain size for higher bias voltages, yielding a grain size of 7 nm and a microstrain of 2.5% at a bias voltage of − 200 V with additional incorporation of argon. Furthermore, the effect of impurities on the ionic conductivity has been investigated, since Hf impurities were found in the samples with yttria concentrations of 8.7, and 9.9 mol%. Temperature-dependent impedance spectroscopy of the YSZ films, deposited at 400 °C and floating potential, showed no variation of the in-plane ionic conductivity with yttria concentration. However, for films deposited at 400 °C and a bias − 70 V, the in-plane ionic conductivity decreased systematically for samples with yttria concentrations of 8.7 and 9.9 mol% compared to the sample with 11 mol% yttria. This suggests that ionic conduction is not a purely bulk mechanism, but mainly related to the grain boundaries. The activation energy for oxygen ion migration was determined to be between 1.25 and 1.32 eV.
    Original languageEnglish
    JournalSolid State Ionics
    Volume181
    Issue number19-20
    Pages (from-to)864-867
    ISSN0167-2738
    DOIs
    Publication statusPublished - 2010

    Keywords

    • Solid Oxide Fuel Cells
    • Fuel Cells and hydrogen

    Cite this

    @article{98580e0069cc44228082ac82b823f7b6,
    title = "Effects of dopant concentration and impurities on the conductivity of magnetron-sputtered nanocrystalline yttria-stabilized zirconia",
    abstract = "Cubic yttria-stabilized zirconia (YSZ) films with yttria concentrations of 8.7, 9.9, and 11 mol{\%} have been deposited by reactive pulsed DC magnetron from Zr–Y alloy targets. The overall microstructure and texture in the films showed no dependence on the yttria concentration. Films deposited at floating potential had a <111> texture. Single-line profile analysis of the 111 X-ray diffraction peak yielded a grain size of 18 nm and a microstrain of 2{\%}, regardless of deposition temperature. Films deposited at 400 °C and selected bias voltages in the range from − 70 V to − 200 V showed a reduced grain size for higher bias voltages, yielding a grain size of 7 nm and a microstrain of 2.5{\%} at a bias voltage of − 200 V with additional incorporation of argon. Furthermore, the effect of impurities on the ionic conductivity has been investigated, since Hf impurities were found in the samples with yttria concentrations of 8.7, and 9.9 mol{\%}. Temperature-dependent impedance spectroscopy of the YSZ films, deposited at 400 °C and floating potential, showed no variation of the in-plane ionic conductivity with yttria concentration. However, for films deposited at 400 °C and a bias − 70 V, the in-plane ionic conductivity decreased systematically for samples with yttria concentrations of 8.7 and 9.9 mol{\%} compared to the sample with 11 mol{\%} yttria. This suggests that ionic conduction is not a purely bulk mechanism, but mainly related to the grain boundaries. The activation energy for oxygen ion migration was determined to be between 1.25 and 1.32 eV.",
    keywords = "Solid Oxide Fuel Cells, Fuel Cells and hydrogen, Br{\ae}ndselsceller og brint",
    author = "M. Sillassen and P. Eklund and Nini Pryds and J. B{\o}ttiger",
    year = "2010",
    doi = "10.1016/j.ssi.2010.05.013",
    language = "English",
    volume = "181",
    pages = "864--867",
    journal = "Solid State Ionics",
    issn = "0167-2738",
    publisher = "Elsevier",
    number = "19-20",

    }

    Effects of dopant concentration and impurities on the conductivity of magnetron-sputtered nanocrystalline yttria-stabilized zirconia. / Sillassen, M.; Eklund, P.; Pryds, Nini; Bøttiger, J.

    In: Solid State Ionics, Vol. 181, No. 19-20, 2010, p. 864-867.

    Research output: Contribution to journalJournal articleResearchpeer-review

    TY - JOUR

    T1 - Effects of dopant concentration and impurities on the conductivity of magnetron-sputtered nanocrystalline yttria-stabilized zirconia

    AU - Sillassen, M.

    AU - Eklund, P.

    AU - Pryds, Nini

    AU - Bøttiger, J.

    PY - 2010

    Y1 - 2010

    N2 - Cubic yttria-stabilized zirconia (YSZ) films with yttria concentrations of 8.7, 9.9, and 11 mol% have been deposited by reactive pulsed DC magnetron from Zr–Y alloy targets. The overall microstructure and texture in the films showed no dependence on the yttria concentration. Films deposited at floating potential had a <111> texture. Single-line profile analysis of the 111 X-ray diffraction peak yielded a grain size of 18 nm and a microstrain of 2%, regardless of deposition temperature. Films deposited at 400 °C and selected bias voltages in the range from − 70 V to − 200 V showed a reduced grain size for higher bias voltages, yielding a grain size of 7 nm and a microstrain of 2.5% at a bias voltage of − 200 V with additional incorporation of argon. Furthermore, the effect of impurities on the ionic conductivity has been investigated, since Hf impurities were found in the samples with yttria concentrations of 8.7, and 9.9 mol%. Temperature-dependent impedance spectroscopy of the YSZ films, deposited at 400 °C and floating potential, showed no variation of the in-plane ionic conductivity with yttria concentration. However, for films deposited at 400 °C and a bias − 70 V, the in-plane ionic conductivity decreased systematically for samples with yttria concentrations of 8.7 and 9.9 mol% compared to the sample with 11 mol% yttria. This suggests that ionic conduction is not a purely bulk mechanism, but mainly related to the grain boundaries. The activation energy for oxygen ion migration was determined to be between 1.25 and 1.32 eV.

    AB - Cubic yttria-stabilized zirconia (YSZ) films with yttria concentrations of 8.7, 9.9, and 11 mol% have been deposited by reactive pulsed DC magnetron from Zr–Y alloy targets. The overall microstructure and texture in the films showed no dependence on the yttria concentration. Films deposited at floating potential had a <111> texture. Single-line profile analysis of the 111 X-ray diffraction peak yielded a grain size of 18 nm and a microstrain of 2%, regardless of deposition temperature. Films deposited at 400 °C and selected bias voltages in the range from − 70 V to − 200 V showed a reduced grain size for higher bias voltages, yielding a grain size of 7 nm and a microstrain of 2.5% at a bias voltage of − 200 V with additional incorporation of argon. Furthermore, the effect of impurities on the ionic conductivity has been investigated, since Hf impurities were found in the samples with yttria concentrations of 8.7, and 9.9 mol%. Temperature-dependent impedance spectroscopy of the YSZ films, deposited at 400 °C and floating potential, showed no variation of the in-plane ionic conductivity with yttria concentration. However, for films deposited at 400 °C and a bias − 70 V, the in-plane ionic conductivity decreased systematically for samples with yttria concentrations of 8.7 and 9.9 mol% compared to the sample with 11 mol% yttria. This suggests that ionic conduction is not a purely bulk mechanism, but mainly related to the grain boundaries. The activation energy for oxygen ion migration was determined to be between 1.25 and 1.32 eV.

    KW - Solid Oxide Fuel Cells

    KW - Fuel Cells and hydrogen

    KW - Brændselsceller og brint

    U2 - 10.1016/j.ssi.2010.05.013

    DO - 10.1016/j.ssi.2010.05.013

    M3 - Journal article

    VL - 181

    SP - 864

    EP - 867

    JO - Solid State Ionics

    JF - Solid State Ionics

    SN - 0167-2738

    IS - 19-20

    ER -