Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3

Research output: Contribution to journalJournal article – Annual report year: 2017Researchpeer-review

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Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3. / Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu; Jinno, Daiki ; Kamiyama, Satoshi; Petersen, Paul Michael; Ou, Haiyan.

In: RSC Advances, Vol. 7, 2017, p. 8090–8097.

Research output: Contribution to journalJournal article – Annual report year: 2017Researchpeer-review

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@article{4fc1f48e78be4b41a3a7473e7ad1ead4,
title = "Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3",
abstract = "Porous silicon carbide (B–N co-doped SiC) produced by anodic oxidation showed strong photoluminescence (PL) at around 520 nm excited by a 375 nm laser. The porous SiC samples were passivated by atomic layer deposited (ALD) aluminum oxide (Al2O3) films, resulting in a significant enhancement of the PL intensity (up to 689{\%}). The effect of thickness, annealing temperature, annealing duration and precursor purge time on the PL intensity of ALD Al2O3 films was investigated. In order to investigate the penetration depth and passivation effect in porous SiC, the samples were characterized by X-ray photoelectron spectroscopy (XPS) and time-resolved PL. The optimized passivation conditions (20 nm Al2O3 deposited at 160 °C with purge time of 20 s, followed by an annealing for 5 min at 350 °C) for porous SiC were achieved and the results indicate that surface passivation by ALD Al2O3 thin films is a very effective method to enhance the luminescence efficiency of porous SiC.",
author = "Weifang Lu and Yoshimi Iwasa and Yiyu Ou and Daiki Jinno and Satoshi Kamiyama and Petersen, {Paul Michael} and Haiyan Ou",
year = "2017",
doi = "10.1039/c6ra27281a",
language = "English",
volume = "7",
pages = "8090–8097",
journal = "R S C Advances",
issn = "2046-2069",
publisher = "RSC Publishing",

}

RIS

TY - JOUR

T1 - Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3

AU - Lu, Weifang

AU - Iwasa, Yoshimi

AU - Ou, Yiyu

AU - Jinno, Daiki

AU - Kamiyama, Satoshi

AU - Petersen, Paul Michael

AU - Ou, Haiyan

PY - 2017

Y1 - 2017

N2 - Porous silicon carbide (B–N co-doped SiC) produced by anodic oxidation showed strong photoluminescence (PL) at around 520 nm excited by a 375 nm laser. The porous SiC samples were passivated by atomic layer deposited (ALD) aluminum oxide (Al2O3) films, resulting in a significant enhancement of the PL intensity (up to 689%). The effect of thickness, annealing temperature, annealing duration and precursor purge time on the PL intensity of ALD Al2O3 films was investigated. In order to investigate the penetration depth and passivation effect in porous SiC, the samples were characterized by X-ray photoelectron spectroscopy (XPS) and time-resolved PL. The optimized passivation conditions (20 nm Al2O3 deposited at 160 °C with purge time of 20 s, followed by an annealing for 5 min at 350 °C) for porous SiC were achieved and the results indicate that surface passivation by ALD Al2O3 thin films is a very effective method to enhance the luminescence efficiency of porous SiC.

AB - Porous silicon carbide (B–N co-doped SiC) produced by anodic oxidation showed strong photoluminescence (PL) at around 520 nm excited by a 375 nm laser. The porous SiC samples were passivated by atomic layer deposited (ALD) aluminum oxide (Al2O3) films, resulting in a significant enhancement of the PL intensity (up to 689%). The effect of thickness, annealing temperature, annealing duration and precursor purge time on the PL intensity of ALD Al2O3 films was investigated. In order to investigate the penetration depth and passivation effect in porous SiC, the samples were characterized by X-ray photoelectron spectroscopy (XPS) and time-resolved PL. The optimized passivation conditions (20 nm Al2O3 deposited at 160 °C with purge time of 20 s, followed by an annealing for 5 min at 350 °C) for porous SiC were achieved and the results indicate that surface passivation by ALD Al2O3 thin films is a very effective method to enhance the luminescence efficiency of porous SiC.

U2 - 10.1039/c6ra27281a

DO - 10.1039/c6ra27281a

M3 - Journal article

VL - 7

SP - 8090

EP - 8097

JO - R S C Advances

JF - R S C Advances

SN - 2046-2069

ER -