Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids

V.F. Onyshchenko, L.A. Karachevtseva, O.O. Lytvynenko, Maksym Plakhotnyuk, O.J. Stronska

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    Abstract

    We calculated the dependence of effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids on the diameter of the cone base, the side of the pyramid base, the height of cone and pyramid. The numerical calculation shows that n-type polished plate of single crystal silicon and n-type plate of black silicon have a high minority carrier lifetime both in the bulk and on the silicon surface, indicating a high purity of both the bulk of silicon and its surface. However, the measured experimentally effective lifetime of minority carriers in the n-type black silicon is 1.55 ms and is determined by the surface lifetime. The measured effective lifetime of minority charge carriers in the p-type polished silicon is 1.24 ms. The minority carrier lifetime in the bulk of the polished p-type silicon is lower than the surface one.
    Original languageEnglish
    JournalSemiconductor Physics, Quantum Electronics & Optoelectronics
    Volume20
    Issue number3
    DOIs
    Publication statusPublished - 2017

    Keywords

    • Effective minority carrier lifetime
    • Excess minority carrier
    • Black silicon

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