Effect of Vacuum Annealing on Orientation of Fluorite Films on Tilted-Axes Substrates

P. B. Mozhaev*, J. B. Hansen, C. S. Jacobsen

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review


CeO2 and Y:ZrO2 (YSZ) fluorite films were deposited on NdGaO3 (NGO) tilted-axes substrates by pulsed laser deposition technique after oxygen or vacuum annealing, the orientation features of the resulting films were studied. The fluorite films on oxygen-annealed substrates showed good agreement with the graphoepitaxial growth mechanism. An excessive tilt over the calculated values is observed for substrate tilt angles of 10°–15°, presumably as a result of generation of regular dislocations. On vacuum-annealed substrates the YSZ films showed no additional tilt, instead a re-orientation towards (012) and (013) crystallographic planes of the film is observed for tilt angles 13°–15° and 18°–20°, respectively. Similar effects are observed for CeO2 films after relaxation at critical thickness. The CeO2 films on vacuum annealed substrates are seeded with alignment of (111) plane with the (110) plane of the substrate instead of standard (001) CeO2 plane. Some part of the CeO2 grains is oriented with the (111) plane along the substrate surface. The angular vicinity of a small-index crystallographic plane to the graphoepitaxial tilt value may result in an “accidental” epitaxial alignment.

Original languageEnglish
JournalRussian Microelectronics
Issue numberSuppl. 1
Pages (from-to)S199-S208
Publication statusPublished - 2023


  • Graphoepitaxy
  • Surface energy minimization
  • Tilted-axes substrates
  • Vacuum annealing


Dive into the research topics of 'Effect of Vacuum Annealing on Orientation of Fluorite Films on Tilted-Axes Substrates'. Together they form a unique fingerprint.

Cite this