Effect of the laser sputtering parameters on the orientation of a cerium oxide buffer layer on sapphire and the properties of a YBa2Cu3Ox superconducting film

P. B. Mozhaev, G. A. Ovsyannikov, Johannes Skov

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

The effect of the laser sputtering parameters on the crystal properties of CeO2 buffer layers grown on a (1 (1) under bar 02) sapphire substrate and on the properties of superconducting YBa2Cu3Ox thin films are investigated. It is shown that (100) and (111) CeO2 growth is observed, depending on the sputtering conditions. A buffer layer with the desired unidirectional orientation can be obtained by varying the heater temperature, the pressure in the chamber, and the energy density of the laser beam at the target. (C) 1999 American Institute of Physics.
Original languageEnglish
JournalTechnical Physics
Volume44
Issue number2
Pages (from-to)242-245
ISSN1063-7842
DOIs
Publication statusPublished - 1999

Keywords

  • THIN-FILMS
  • CEO2 BUFFER

Cite this

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title = "Effect of the laser sputtering parameters on the orientation of a cerium oxide buffer layer on sapphire and the properties of a YBa2Cu3Ox superconducting film",
abstract = "The effect of the laser sputtering parameters on the crystal properties of CeO2 buffer layers grown on a (1 (1) under bar 02) sapphire substrate and on the properties of superconducting YBa2Cu3Ox thin films are investigated. It is shown that (100) and (111) CeO2 growth is observed, depending on the sputtering conditions. A buffer layer with the desired unidirectional orientation can be obtained by varying the heater temperature, the pressure in the chamber, and the energy density of the laser beam at the target. (C) 1999 American Institute of Physics.",
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year = "1999",
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language = "English",
volume = "44",
pages = "242--245",
journal = "Technical Physics",
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publisher = "M A I K Nauka - Interperiodica",
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Effect of the laser sputtering parameters on the orientation of a cerium oxide buffer layer on sapphire and the properties of a YBa2Cu3Ox superconducting film. / Mozhaev, P. B.; Ovsyannikov, G. A.; Skov, Johannes.

In: Technical Physics, Vol. 44, No. 2, 1999, p. 242-245.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Effect of the laser sputtering parameters on the orientation of a cerium oxide buffer layer on sapphire and the properties of a YBa2Cu3Ox superconducting film

AU - Mozhaev, P. B.

AU - Ovsyannikov, G. A.

AU - Skov, Johannes

PY - 1999

Y1 - 1999

N2 - The effect of the laser sputtering parameters on the crystal properties of CeO2 buffer layers grown on a (1 (1) under bar 02) sapphire substrate and on the properties of superconducting YBa2Cu3Ox thin films are investigated. It is shown that (100) and (111) CeO2 growth is observed, depending on the sputtering conditions. A buffer layer with the desired unidirectional orientation can be obtained by varying the heater temperature, the pressure in the chamber, and the energy density of the laser beam at the target. (C) 1999 American Institute of Physics.

AB - The effect of the laser sputtering parameters on the crystal properties of CeO2 buffer layers grown on a (1 (1) under bar 02) sapphire substrate and on the properties of superconducting YBa2Cu3Ox thin films are investigated. It is shown that (100) and (111) CeO2 growth is observed, depending on the sputtering conditions. A buffer layer with the desired unidirectional orientation can be obtained by varying the heater temperature, the pressure in the chamber, and the energy density of the laser beam at the target. (C) 1999 American Institute of Physics.

KW - THIN-FILMS

KW - CEO2 BUFFER

U2 - 10.1134/1.1259293

DO - 10.1134/1.1259293

M3 - Journal article

VL - 44

SP - 242

EP - 245

JO - Technical Physics

JF - Technical Physics

SN - 1063-7842

IS - 2

ER -