Effect of strain on optical properties of bent nanowires

B. Lassen, Morten Willatzen

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

In this work we study the deformation of ZnO nanowires under the influence of an applied force at the top of the wire. We show that the Euler-Bernoulli beam equation can be used even for relatively high forces although a full non linear theory does show quantitative differences, however, not qualitative differences. We furthermore show that strain induces a confinement of the electrons which results in a significant increase in the conduction band energy spacing. It is known that piezoelectric effects are important in ZnO nanowire, however, these are disregarded in this work in order to wholly focus on the effect of strain.
Original languageEnglish
Title of host publicationPhysics of Semiconductors : 30th International Conference on the Physics of Semiconductors
Publication date2011
Pages495-496
ISBN (Print)978-0-7354-1002-2
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event30th International Conference on the Physics of Semiconductors - Seoul, Korea, Republic of
Duration: 25 Jul 201030 Jul 2010
Conference number: 30
http://www.icps2010.org/

Conference

Conference30th International Conference on the Physics of Semiconductors
Number30
CountryKorea, Republic of
CitySeoul
Period25/07/201030/07/2010
Internet address
SeriesAip Conference Proceedings
Volume1399
ISSN0094-243X

Keywords

  • Nanowires
  • Elasticity
  • Euler-Bernoulli beam equation
  • Non linear strain
  • Electronic band structure

Cite this

Lassen, B., & Willatzen, M. (2011). Effect of strain on optical properties of bent nanowires. In Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors (pp. 495-496). Aip Conference Proceedings, Vol.. 1399 https://doi.org/10.1063/1.3666470