Abstract
In this work we study the deformation of ZnO nanowires under the influence of an applied force at the top of the wire. We show that the Euler-Bernoulli beam equation can be used even for relatively high forces although a full non linear theory does show quantitative differences, however, not qualitative differences. We furthermore show that strain induces a confinement of the electrons which results in a significant increase in the conduction band energy spacing. It is known that piezoelectric effects are important in ZnO nanowire, however, these are disregarded in this work in order to wholly focus on the effect of strain.
Original language | English |
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Title of host publication | Physics of Semiconductors : 30th International Conference on the Physics of Semiconductors |
Publication date | 2011 |
Pages | 495-496 |
ISBN (Print) | 978-0-7354-1002-2 |
DOIs | |
Publication status | Published - 2011 |
Externally published | Yes |
Event | 30th International Conference on the Physics of Semiconductors - Seoul, Korea, Republic of Duration: 25 Jul 2010 → 30 Jul 2010 Conference number: 30 http://www.icps2010.org/ |
Conference
Conference | 30th International Conference on the Physics of Semiconductors |
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Number | 30 |
Country/Territory | Korea, Republic of |
City | Seoul |
Period | 25/07/2010 → 30/07/2010 |
Internet address |
Series | AIP Conference Proceedings |
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Volume | 1399 |
ISSN | 0094-243X |
Keywords
- Nanowires
- Elasticity
- Euler-Bernoulli beam equation
- Non linear strain
- Electronic band structure