Abstract
Development of solid dielectric dc transmission class cable has become a priority throughout much of the world. Interdiffusion between the semiconducting electrode materials and the dielectric inevitably causes variations in conductivity of the dielectric near the semicon which results in distortion of the electric field and space charge formation under dc conditions. Analytical approximations and numerical computations provide a basis for analyzing space charge measurements, and based on such space charge measurements and the analysis, we estimate the field distortion for several material systems.
| Original language | English |
|---|---|
| Journal | I E E E Transactions on Dielectrics and Electrical Insulation |
| Volume | 9 |
| Issue number | 4 |
| Pages (from-to) | 596-603 |
| ISSN | 1070-9878 |
| DOIs | |
| Publication status | Published - 2002 |
Bibliographical note
Copyright: 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEECite this
Hjerrild, J., Holbøll, J., Henriksen, M., & Boggs, S. (2002). Effect of Semicon-Dielectric Interface on Conductivity and Electric Field Distribution. I E E E Transactions on Dielectrics and Electrical Insulation, 9(4), 596-603. https://doi.org/10.1109/TDEI.2002.1024438