Effect of post-growth annealing on secondary phase formation in low-temperature-grown Mn-doped GaAs

A. Kovács; J. Sadowski; Takeshi Kasama; Martial Duchamp; Rafal E. Dunin-Borkowski

doi:10.1088/0022-3727/46/14/145309

Effect of post-growth annealing on secondary phase formation in low-temperature-grown Mn-doped GaAs

A. Kovács, J. Sadowski, Takeshi Kasama, Martial Duchamp, Rafal E. Dunin-Borkowski

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

The microstructures of annealed GaAs layers containing 0.1%, 0.5% and 2% Mn are studied using aberration-corrected transmission electron microscopy (TEM). The layers were grown by molecular beam epitaxy at 270 °C. After heat treatment at 400, 560 and 630 °C, they are found to contain precipitate complexes of cubic or hexagonal (Mn, Ga) As, orthorhombic or rhombohedral As and voids. Information about the crystallographic structures and compositions of the phases is obtained using high-resolution TEM, scanning TEM and energy-dispersive x-ray spectroscopy. A phase diagram for secondary phase formation in annealed GaMnAs layers doped with low Mn concentrations is proposed.

Original language	English
Journal	Journal of Physics D: Applied Physics
Volume	46
Issue number	14
Pages (from-to)	145309
Number of pages	7
ISSN	0022-3727
DOIs	https://doi.org/10.1088/0022-3727/46/14/145309
Publication status	Published - 2013

Keywords

Annealing
Energy dispersive spectroscopy
Gallium arsenide
Molecular beam epitaxy
Phase diagrams
Semiconducting gallium
Transmission electron microscopy
Manganese

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title = "Effect of post-growth annealing on secondary phase formation in low-temperature-grown Mn-doped GaAs",

abstract = "The microstructures of annealed GaAs layers containing 0.1%, 0.5% and 2% Mn are studied using aberration-corrected transmission electron microscopy (TEM). The layers were grown by molecular beam epitaxy at 270 °C. After heat treatment at 400, 560 and 630 °C, they are found to contain precipitate complexes of cubic or hexagonal (Mn, Ga) As, orthorhombic or rhombohedral As and voids. Information about the crystallographic structures and compositions of the phases is obtained using high-resolution TEM, scanning TEM and energy-dispersive x-ray spectroscopy. A phase diagram for secondary phase formation in annealed GaMnAs layers doped with low Mn concentrations is proposed.",

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T1 - Effect of post-growth annealing on secondary phase formation in low-temperature-grown Mn-doped GaAs

AU - Kovács, A.

AU - Sadowski, J.

AU - Kasama, Takeshi

AU - Duchamp, Martial

AU - Dunin-Borkowski, Rafal E.

PY - 2013

Y1 - 2013

N2 - The microstructures of annealed GaAs layers containing 0.1%, 0.5% and 2% Mn are studied using aberration-corrected transmission electron microscopy (TEM). The layers were grown by molecular beam epitaxy at 270 °C. After heat treatment at 400, 560 and 630 °C, they are found to contain precipitate complexes of cubic or hexagonal (Mn, Ga) As, orthorhombic or rhombohedral As and voids. Information about the crystallographic structures and compositions of the phases is obtained using high-resolution TEM, scanning TEM and energy-dispersive x-ray spectroscopy. A phase diagram for secondary phase formation in annealed GaMnAs layers doped with low Mn concentrations is proposed.

AB - The microstructures of annealed GaAs layers containing 0.1%, 0.5% and 2% Mn are studied using aberration-corrected transmission electron microscopy (TEM). The layers were grown by molecular beam epitaxy at 270 °C. After heat treatment at 400, 560 and 630 °C, they are found to contain precipitate complexes of cubic or hexagonal (Mn, Ga) As, orthorhombic or rhombohedral As and voids. Information about the crystallographic structures and compositions of the phases is obtained using high-resolution TEM, scanning TEM and energy-dispersive x-ray spectroscopy. A phase diagram for secondary phase formation in annealed GaMnAs layers doped with low Mn concentrations is proposed.

KW - Annealing

KW - Energy dispersive spectroscopy

KW - Gallium arsenide

KW - Molecular beam epitaxy

KW - Phase diagrams

KW - Semiconducting gallium

KW - Transmission electron microscopy

KW - Manganese

U2 - 10.1088/0022-3727/46/14/145309

DO - 10.1088/0022-3727/46/14/145309

M3 - Journal article

SN - 0022-3727

VL - 46

SP - 145309

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 14

ER -

Effect of post-growth annealing on secondary phase formation in low-temperature-grown Mn-doped GaAs

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Keywords

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