Effect of grain size and orientation on magnetron sputtering yield of tantalum

Kai Yu, Xin Xue, Longfei Xu, Guipeng Li, Xiaodan Zhang, Yuhui Wang*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

The electron beam melting (EBM) technique was employed to prepare ultra-highly pure (99.999 wt%) Tantalum (Ta) cast ingot for application in chips. Subsequently, the Ta cast ingot were forged, rolled, and annealed with different durations to gain three different grain sizes (centimeter scale, 99.8 μm, and 36.7 μm). Sputtering experiments conducted under identical conditions revealed that the rolled target (36.7 μm) film deposition rate was increased by 60.6 % compared to the cast ingot target with a centimeter-scale grain size (columnar crystal). Ta targets with a fine grain size and homogeneous distribution demonstrate superior film deposition performance. The sputtering rate is directly related to the atomic packing density of grains. The (111)-oriented grains of BCC targets (Ta target) exhibit sputtering resistance, and the order of sputtering rate of Ta atoms was S(101) > S(001) > S(111).
Original languageEnglish
Article number106948
JournalInternational Journal of Refractory Metals and Hard Materials
Volume126
Number of pages8
ISSN0958-0611
DOIs
Publication statusPublished - 2025

Keywords

  • Deposition rate
  • Grain size and orientation
  • Sputtering rate
  • Tantalum target
  • Electron beam melting

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