Effect of gain nonlinearity in semiconductor lasers

Niels H. Jensen, Peter Leth Christiansen, Ove Skovgaard

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    Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensional Fokker-Planck equation is derived and integrated on an Amdahl VP1100 vector processor. Above threshold the resulting probability density agrees with the rate-equation predictions. The case of high-speed modulation is also considered. The nonlinear gain is found to stabilize the laser.
    Original languageEnglish
    JournalPhysical Review B
    Issue number12
    Pages (from-to)8219-8225
    Publication statusPublished - 1988

    Bibliographical note

    Copyright (1988) by the American Physical Society.

    Cite this

    Jensen, N. H., Christiansen, P. L., & Skovgaard, O. (1988). Effect of gain nonlinearity in semiconductor lasers. Physical Review B, 38(12), 8219-8225. https://doi.org/10.1103/PhysRevB.38.8219