Effect of gain nonlinearity in semiconductor lasers

Niels H. Jensen, Peter Leth Christiansen, Ove Skovgaard

    Research output: Contribution to journalJournal articleResearchpeer-review

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    Abstract

    Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensional Fokker-Planck equation is derived and integrated on an Amdahl VP1100 vector processor. Above threshold the resulting probability density agrees with the rate-equation predictions. The case of high-speed modulation is also considered. The nonlinear gain is found to stabilize the laser.
    Original languageEnglish
    JournalPhysical Review B
    Volume38
    Issue number12
    Pages (from-to)8219-8225
    ISSN2469-9950
    DOIs
    Publication statusPublished - 1988

    Bibliographical note

    Copyright (1988) by the American Physical Society.

    Cite this

    Jensen, Niels H. ; Christiansen, Peter Leth ; Skovgaard, Ove. / Effect of gain nonlinearity in semiconductor lasers. In: Physical Review B. 1988 ; Vol. 38, No. 12. pp. 8219-8225.
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    author = "Jensen, {Niels H.} and Christiansen, {Peter Leth} and Ove Skovgaard",
    note = "Copyright (1988) by the American Physical Society.",
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    Effect of gain nonlinearity in semiconductor lasers. / Jensen, Niels H.; Christiansen, Peter Leth; Skovgaard, Ove.

    In: Physical Review B, Vol. 38, No. 12, 1988, p. 8219-8225.

    Research output: Contribution to journalJournal articleResearchpeer-review

    TY - JOUR

    T1 - Effect of gain nonlinearity in semiconductor lasers

    AU - Jensen, Niels H.

    AU - Christiansen, Peter Leth

    AU - Skovgaard, Ove

    N1 - Copyright (1988) by the American Physical Society.

    PY - 1988

    Y1 - 1988

    N2 - Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensional Fokker-Planck equation is derived and integrated on an Amdahl VP1100 vector processor. Above threshold the resulting probability density agrees with the rate-equation predictions. The case of high-speed modulation is also considered. The nonlinear gain is found to stabilize the laser.

    AB - Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensional Fokker-Planck equation is derived and integrated on an Amdahl VP1100 vector processor. Above threshold the resulting probability density agrees with the rate-equation predictions. The case of high-speed modulation is also considered. The nonlinear gain is found to stabilize the laser.

    U2 - 10.1103/PhysRevB.38.8219

    DO - 10.1103/PhysRevB.38.8219

    M3 - Journal article

    VL - 38

    SP - 8219

    EP - 8225

    JO - Physical Review B (Condensed Matter and Materials Physics)

    JF - Physical Review B (Condensed Matter and Materials Physics)

    SN - 1098-0121

    IS - 12

    ER -