Effect of dopants on the morphology of porous SiC

Weifang Lu; Yoshimi Iwasa; Yiyu Ou; Satoshi Kamiyama; Paul Michael Petersen; Haiyan Ou

Effect of dopants on the morphology of porous SiC

Weifang Lu
, Yoshimi Iwasa
, Yiyu Ou
, Satoshi Kamiyama
, Paul Michael Petersen
, Haiyan Ou

Meijo University

Research output: Contribution to conference › Conference abstract for conference › Research › peer-review

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Abstract

Porous SiC samples with different doping level were fabricated and investigated by using anodic oxidation method. The morphology of the porous structures was explained by space charge layer width, which was affected by the free
carrier-dopants concentration.

Original language	English
Publication date	2017
Number of pages	1
Publication status	Published - 2017
Event	5th international workshop on LED and Solar Applications - DTU, Building 101, Kgs. Lyngby, Denmark Duration: 13 Sept 2017 → 14 Sept 2017

Conference

Conference	5th international workshop on LED and Solar Applications
Location	DTU, Building 101
Country/Territory	Denmark
City	Kgs. Lyngby
Period	13/09/2017 → 14/09/2017

Keywords

Porous
Dopants
Space charge layer
Morphology

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@conference{326e1401d0784360b64ae4447c60e9c3,

title = "Effect of dopants on the morphology of porous SiC",

abstract = "Porous SiC samples with different doping level were fabricated and investigated by using anodic oxidation method. The morphology of the porous structures was explained by space charge layer width, which was affected by the free carrier-dopants concentration.",

keywords = "Porous, Dopants, Space charge layer, Morphology",

author = "Weifang Lu and Yoshimi Iwasa and Yiyu Ou and Satoshi Kamiyama and Petersen, \{Paul Michael\} and Haiyan Ou",

year = "2017",

language = "English",

note = "5th international workshop on LED and Solar Applications ; Conference date: 13-09-2017 Through 14-09-2017",

}

TY - ABST

T1 - Effect of dopants on the morphology of porous SiC

AU - Lu, Weifang

AU - Iwasa, Yoshimi

AU - Ou, Yiyu

AU - Kamiyama, Satoshi

AU - Petersen, Paul Michael

AU - Ou, Haiyan

PY - 2017

Y1 - 2017

N2 - Porous SiC samples with different doping level were fabricated and investigated by using anodic oxidation method. The morphology of the porous structures was explained by space charge layer width, which was affected by the free carrier-dopants concentration.

AB - Porous SiC samples with different doping level were fabricated and investigated by using anodic oxidation method. The morphology of the porous structures was explained by space charge layer width, which was affected by the free carrier-dopants concentration.

KW - Porous

KW - Dopants

KW - Space charge layer

KW - Morphology

M3 - Conference abstract for conference

T2 - 5th international workshop on LED and Solar Applications

Y2 - 13 September 2017 through 14 September 2017

ER -

Effect of dopants on the morphology of porous SiC

Abstract

Conference

Keywords

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