Effect of dopants on the morphology of porous SiC

Weifang Lu, Yoshimi Iwasa, Yiyu Ou, Satoshi Kamiyama, Paul Michael Petersen, Haiyan Ou

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Abstract

Porous SiC samples with different doping level were fabricated and investigated by using anodic oxidation method. The morphology of the porous structures was explained by space charge layer width, which was affected by the free
carrier-dopants concentration.
Original languageEnglish
Publication date2017
Number of pages1
Publication statusPublished - 2017
Event5th international workshop on LED and Solar Applications - DTU, Building 101, Kgs. Lyngby, Denmark
Duration: 13 Sep 201714 Sep 2017

Conference

Conference5th international workshop on LED and Solar Applications
LocationDTU, Building 101
CountryDenmark
CityKgs. Lyngby
Period13/09/201714/09/2017

Keywords

  • Porous
  • Dopants
  • Space charge layer
  • Morphology

Cite this

Lu, W., Iwasa, Y., Ou, Y., Kamiyama, S., Petersen, P. M., & Ou, H. (2017). Effect of dopants on the morphology of porous SiC. Abstract from 5th international workshop on LED and Solar Applications, Kgs. Lyngby, Denmark.