Effect of Copper on the Carrier Lifetime in Black Silicon

Henrik Porte; Dmitry Turchinovich; Saydulla Persheyev; Yongchang Fan; Mervyn J. Rose; Peter Uhd Jepsen

doi:10.1007/s10762-011-9801-x

Effect of Copper on the Carrier Lifetime in Black Silicon

Henrik Porte
, Dmitry Turchinovich
, Saydulla Persheyev
, Yongchang Fan
, Mervyn J. Rose
, Peter Uhd Jepsen

University of Dundee

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Black silicon is produced by laser annealing of a-Si:H films. During annealing, silicon microstructures are formed on the surface. We use time-resolved terahertz spectroscopy to study the photoconductivity dynamics in black silicon. We find that when a copper film is deposited on top of the a-Si:H layer prior to laser annealing, the carrier lifetime of black silicon is significantly reduced.

Original language	English
Journal	Journal of Infrared, Millimeter and Terahertz Waves
Volume	32
Issue number	7
Pages (from-to)	883-886
ISSN	1866-6892
DOIs	https://doi.org/10.1007/s10762-011-9801-x
Publication status	Published - 2011

Access to Document

10.1007/s10762-011-9801-x

OpenUrl availability

Check availability in DTU Findit

Cite this

@article{680873e16bf14c8e9f0edc4b2025ec0f,

title = "Effect of Copper on the Carrier Lifetime in Black Silicon",

abstract = "Black silicon is produced by laser annealing of a-Si:H films. During annealing, silicon microstructures are formed on the surface. We use time-resolved terahertz spectroscopy to study the photoconductivity dynamics in black silicon. We find that when a copper film is deposited on top of the a-Si:H layer prior to laser annealing, the carrier lifetime of black silicon is significantly reduced.",

author = "Henrik Porte and Dmitry Turchinovich and Saydulla Persheyev and Yongchang Fan and Rose, \{Mervyn J.\} and Jepsen, \{Peter Uhd\}",

year = "2011",

doi = "10.1007/s10762-011-9801-x",

language = "English",

volume = "32",

pages = "883--886",

journal = "Journal of Infrared, Millimeter and Terahertz Waves",

issn = "1866-6892",

publisher = "Springer New York",

number = "7",

}

TY - JOUR

T1 - Effect of Copper on the Carrier Lifetime in Black Silicon

AU - Porte, Henrik

AU - Turchinovich, Dmitry

AU - Persheyev, Saydulla

AU - Fan, Yongchang

AU - Rose, Mervyn J.

AU - Jepsen, Peter Uhd

PY - 2011

Y1 - 2011

N2 - Black silicon is produced by laser annealing of a-Si:H films. During annealing, silicon microstructures are formed on the surface. We use time-resolved terahertz spectroscopy to study the photoconductivity dynamics in black silicon. We find that when a copper film is deposited on top of the a-Si:H layer prior to laser annealing, the carrier lifetime of black silicon is significantly reduced.

AB - Black silicon is produced by laser annealing of a-Si:H films. During annealing, silicon microstructures are formed on the surface. We use time-resolved terahertz spectroscopy to study the photoconductivity dynamics in black silicon. We find that when a copper film is deposited on top of the a-Si:H layer prior to laser annealing, the carrier lifetime of black silicon is significantly reduced.

U2 - 10.1007/s10762-011-9801-x

DO - 10.1007/s10762-011-9801-x

M3 - Journal article

SN - 1866-6892

VL - 32

SP - 883

EP - 886

JO - Journal of Infrared, Millimeter and Terahertz Waves

JF - Journal of Infrared, Millimeter and Terahertz Waves

IS - 7

ER -

Effect of Copper on the Carrier Lifetime in Black Silicon

Abstract

Access to Document

OpenUrl availability

Fingerprint

Cite this