Effect of Copper on the Carrier Lifetime in Black Silicon

Henrik Porte, Dmitry Turchinovich, Saydulla Persheyev, Yongchang Fan, Mervyn J. Rose, Peter Uhd Jepsen

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Black silicon is produced by laser annealing of a-Si:H films. During annealing, silicon microstructures are formed on the surface. We use time-resolved terahertz spectroscopy to study the photoconductivity dynamics in black silicon. We find that when a copper film is deposited on top of the a-Si:H layer prior to laser annealing, the carrier lifetime of black silicon is significantly reduced.
Original languageEnglish
JournalJournal of Infrared, Millimeter and Terahertz Waves
Volume32
Issue number7
Pages (from-to)883-886
ISSN1866-6892
DOIs
Publication statusPublished - 2011

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