Effect of charged line defects on conductivity in graphene: Numerical Kubo and analytical Boltzmann approaches

T. M. Radchenko, A. A. Shylau, I. V. Zozoulenko, Aires Ferreira

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Abstract

Charge carrier transport in single-layer graphene with one-dimensional charged defects is studied theoretically. Extended charged defects, considered an important factor for mobility degradation in chemically vapor-deposited graphene, are described by a self-consistent Thomas-Fermi potential. A numerical study of electronic transport is performed by means of a time-dependent real-space Kubo approach in honeycomb lattices containing millions of carbon atoms, capturing the linear response of realistic size systems in the highly disordered regime. Our numerical calculations are complemented with a kinetic transport theory describing charge transport in the weak scattering limit. The semiclassical transport lifetimes are obtained by computing scattered amplitudes within the second Born approximation. The transport electron-hole asymmetry found in the semiclassical approach is consistent with the Kubo calculations. In the strong scattering regime, the conductivity is found to be a sublinear function of electronic density and weakly dependent on the Thomas-Fermi screening wavelength. We attribute this atypical behavior to the extended nature of one-dimensional charged defects. Our results are consistent with recent experimental reports.
Original languageEnglish
JournalPhysical Review B Condensed Matter
Volume87
Issue number19
Pages (from-to)195448
ISSN0163-1829
DOIs
Publication statusPublished - 2013

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