Effect of B+ Flux on the electrical activation of ultra-shallow B+ implants in Ge

B.R. Yates; B.L. Darby; Dirch Hjorth Petersen; Ole Hansen; R. Lin; P.F. Nielsen; B.L. Doyle; A. Kontos; K.S. Jones

doi:10.1149/05009.0543ecst

Effect of B⁺ Flux on the electrical activation of ultra-shallow B⁺ implants in Ge

B.R. Yates
, B.L. Darby
, Dirch Hjorth Petersen
, Ole Hansen
, R. Lin
, P.F. Nielsen
, B.L. Doyle
, A. Kontos
, K.S. Jones

University of Florida
Technical University of Denmark
Sandia National Laboratories
Applied Materials Incorporated

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

The residual implanted dose of ultra-shallow B⁺ implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23% due to ion backscattering for 2 keV implants in Ge. The electrical characterization of ultra-shallow B⁺ implants at 2 keV to a dose of 5.0×1014 cm-2 at beam currents ranging from 0.4 to 6.4 mA has been studied using micro Hall effect measurements after annealing at 400°C for 60 s. It has been shown that the sheet number increases with beam current across the investigated range with electrical activation being 76% higher at 6.4 mA as compared to 0.4mA. However, at 6.4 mA, the electrically active fraction remained low at 11.4%. Structural characterization revealed that the implanted region remained crystalline and amorphization is not able to explain the increased activation. The results suggest the presence of a stable B:Ge cluster whose formation is altered by point defect recombination during high flux implantation which results in increased B activation. © The Electrochemical Society.

Original language	English
Title of host publication	ECS Transactions
Publisher	The Electrochemical Society
Publication date	2012
Pages	543-549
ISBN (Print)	9781607683575
DOIs	https://doi.org/10.1149/05009.0543ecst
Publication status	Published - 2012
Event	220th ECS Meeting and Electrochemical Energy Summit - Westin Boston Waterfront and the Boston Convention and Exhibition Center, Boston, United States Duration: 9 Oct 2011 → 14 Oct 2011 Conference number: 220 http://www.electrochem.org/meetings/biannual/220/220.htm

Conference

Conference	220th ECS Meeting and Electrochemical Energy Summit
Number	220
Location	Westin Boston Waterfront and the Boston Convention and Exhibition Center
Country/Territory	United States
City	Boston
Period	09/10/2011 → 14/10/2011
Internet address	http://www.electrochem.org/meetings/biannual/220/220.htm

Keywords

Point defects
Silicon alloys
Germanium

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10.1149/05009.0543ecst

ECS TransFinal published version, 375 KB

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Cite this

@inproceedings{454550f264444b3d8542d06d3ed4ba51,

title = "Effect of B+ Flux on the electrical activation of ultra-shallow B+ implants in Ge",

abstract = "The residual implanted dose of ultra-shallow B+ implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23\% due to ion backscattering for 2 keV implants in Ge. The electrical characterization of ultra-shallow B+ implants at 2 keV to a dose of 5.0{\texttimes}1014 cm-2 at beam currents ranging from 0.4 to 6.4 mA has been studied using micro Hall effect measurements after annealing at 400°C for 60 s. It has been shown that the sheet number increases with beam current across the investigated range with electrical activation being 76\% higher at 6.4 mA as compared to 0.4mA. However, at 6.4 mA, the electrically active fraction remained low at 11.4\%. Structural characterization revealed that the implanted region remained crystalline and amorphization is not able to explain the increased activation. The results suggest the presence of a stable B:Ge cluster whose formation is altered by point defect recombination during high flux implantation which results in increased B activation. {\textcopyright} The Electrochemical Society.",

keywords = "Point defects, Silicon alloys, Germanium",

author = "B.R. Yates and B.L. Darby and Petersen, \{Dirch Hjorth\} and Ole Hansen and R. Lin and P.F. Nielsen and B.L. Doyle and A. Kontos and K.S. Jones",

year = "2012",

doi = "10.1149/05009.0543ecst",

language = "English",

isbn = "9781607683575",

pages = "543--549",

booktitle = "ECS Transactions",

publisher = "The Electrochemical Society",

note = "220th ECS Meeting and Electrochemical Energy Summit ; Conference date: 09-10-2011 Through 14-10-2011",

url = "http://www.electrochem.org/meetings/biannual/220/220.htm",

}

Yates, BR, Darby, BL, Petersen, DH, Hansen, O, Lin, R, Nielsen, PF, Doyle, BL, Kontos, A & Jones, KS 2012, Effect of B⁺ Flux on the electrical activation of ultra-shallow B⁺ implants in Ge. in ECS Transactions. The Electrochemical Society, pp. 543-549, 220th ECS Meeting and Electrochemical Energy Summit, Boston, United States, 09/10/2011. https://doi.org/10.1149/05009.0543ecst

TY - GEN

T1 - Effect of B+ Flux on the electrical activation of ultra-shallow B+ implants in Ge

AU - Yates, B.R.

AU - Darby, B.L.

AU - Petersen, Dirch Hjorth

AU - Hansen, Ole

AU - Lin, R.

AU - Nielsen, P.F.

AU - Doyle, B.L.

AU - Kontos, A.

AU - Jones, K.S.

N1 - Conference code: 220

PY - 2012

Y1 - 2012

N2 - The residual implanted dose of ultra-shallow B+ implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23% due to ion backscattering for 2 keV implants in Ge. The electrical characterization of ultra-shallow B+ implants at 2 keV to a dose of 5.0×1014 cm-2 at beam currents ranging from 0.4 to 6.4 mA has been studied using micro Hall effect measurements after annealing at 400°C for 60 s. It has been shown that the sheet number increases with beam current across the investigated range with electrical activation being 76% higher at 6.4 mA as compared to 0.4mA. However, at 6.4 mA, the electrically active fraction remained low at 11.4%. Structural characterization revealed that the implanted region remained crystalline and amorphization is not able to explain the increased activation. The results suggest the presence of a stable B:Ge cluster whose formation is altered by point defect recombination during high flux implantation which results in increased B activation. © The Electrochemical Society.

AB - The residual implanted dose of ultra-shallow B+ implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23% due to ion backscattering for 2 keV implants in Ge. The electrical characterization of ultra-shallow B+ implants at 2 keV to a dose of 5.0×1014 cm-2 at beam currents ranging from 0.4 to 6.4 mA has been studied using micro Hall effect measurements after annealing at 400°C for 60 s. It has been shown that the sheet number increases with beam current across the investigated range with electrical activation being 76% higher at 6.4 mA as compared to 0.4mA. However, at 6.4 mA, the electrically active fraction remained low at 11.4%. Structural characterization revealed that the implanted region remained crystalline and amorphization is not able to explain the increased activation. The results suggest the presence of a stable B:Ge cluster whose formation is altered by point defect recombination during high flux implantation which results in increased B activation. © The Electrochemical Society.

KW - Point defects

KW - Silicon alloys

KW - Germanium

U2 - 10.1149/05009.0543ecst

DO - 10.1149/05009.0543ecst

M3 - Article in proceedings

SN - 9781607683575

SP - 543

EP - 549

BT - ECS Transactions

PB - The Electrochemical Society

T2 - 220th ECS Meeting and Electrochemical Energy Summit

Y2 - 9 October 2011 through 14 October 2011

ER -