Effect of Asymmetric Barrier Layers in the Waveguide Region on the Temperature Characteristics of QuantumWell Lasers

A. E. Zhukov; L. V. Asryan; Yu. M. Shernyakov; M. V. Maximov; F. I. Zubov; N. V. Kryzhanovskaya; Kresten Yvind; Elizaveta Semenova

doi:10.1134/S1063782612080246

Effect of Asymmetric Barrier Layers in the Waveguide Region on the Temperature Characteristics of QuantumWell Lasers

A. E. Zhukov, L. V. Asryan, Yu. M. Shernyakov, M. V. Maximov, F. I. Zubov, N. V. Kryzhanovskaya, Kresten Yvind, Elizaveta Semenova

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Abstract

The temperature sensitivity of the threshold-current density in quantum-well lasers is studied and the factors affecting the characteristic temperature and its dependence on optical losses are analyzed. It is shown that the inclusion of asymmetric potential barriers (one barrier on each side of the quantum well), which prevent the formation of bipolar carrier population in the waveguide region and lead to weakening of the temperature dependences of the transparency-current density, the gain-saturation parameter and, consequently, to a higher characteristic temperature for both long- and short-cavity laser diodes.

Original language	English
Journal	Semiconductors
Volume	46
Issue number	8
Pages (from-to)	1027-1031
ISSN	1063-7826
DOIs	https://doi.org/10.1134/S1063782612080246
Publication status	Published - 2012

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@article{35823582eb39456187a6bebeb45c033c,

title = "Effect of Asymmetric Barrier Layers in the Waveguide Region on the Temperature Characteristics of QuantumWell Lasers",

abstract = "The temperature sensitivity of the threshold-current density in quantum-well lasers is studied and the factors affecting the characteristic temperature and its dependence on optical losses are analyzed. It is shown that the inclusion of asymmetric potential barriers (one barrier on each side of the quantum well), which prevent the formation of bipolar carrier population in the waveguide region and lead to weakening of the temperature dependences of the transparency-current density, the gain-saturation parameter and, consequently, to a higher characteristic temperature for both long- and short-cavity laser diodes.",

author = "Zhukov, {A. E.} and Asryan, {L. V.} and Shernyakov, {Yu. M.} and Maximov, {M. V.} and Zubov, {F. I.} and Kryzhanovskaya, {N. V.} and Kresten Yvind and Elizaveta Semenova",

year = "2012",

doi = "10.1134/S1063782612080246",

language = "English",

volume = "46",

pages = "1027--1031",

journal = "Fizika i Tekhnika Poluprovodnikov",

issn = "0015-3222",

publisher = "M A I K Nauka - Interperiodica",

number = "8",

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TY - JOUR

T1 - Effect of Asymmetric Barrier Layers in the Waveguide Region on the Temperature Characteristics of QuantumWell Lasers

AU - Zhukov, A. E.

AU - Asryan, L. V.

AU - Shernyakov, Yu. M.

AU - Maximov, M. V.

AU - Zubov, F. I.

AU - Kryzhanovskaya, N. V.

AU - Yvind, Kresten

AU - Semenova, Elizaveta

PY - 2012

Y1 - 2012

N2 - The temperature sensitivity of the threshold-current density in quantum-well lasers is studied and the factors affecting the characteristic temperature and its dependence on optical losses are analyzed. It is shown that the inclusion of asymmetric potential barriers (one barrier on each side of the quantum well), which prevent the formation of bipolar carrier population in the waveguide region and lead to weakening of the temperature dependences of the transparency-current density, the gain-saturation parameter and, consequently, to a higher characteristic temperature for both long- and short-cavity laser diodes.

AB - The temperature sensitivity of the threshold-current density in quantum-well lasers is studied and the factors affecting the characteristic temperature and its dependence on optical losses are analyzed. It is shown that the inclusion of asymmetric potential barriers (one barrier on each side of the quantum well), which prevent the formation of bipolar carrier population in the waveguide region and lead to weakening of the temperature dependences of the transparency-current density, the gain-saturation parameter and, consequently, to a higher characteristic temperature for both long- and short-cavity laser diodes.

U2 - 10.1134/S1063782612080246

DO - 10.1134/S1063782612080246

M3 - Journal article

SN - 0015-3222

VL - 46

SP - 1027

EP - 1031

JO - Fizika i Tekhnika Poluprovodnikov

JF - Fizika i Tekhnika Poluprovodnikov

IS - 8

ER -

Effect of Asymmetric Barrier Layers in the Waveguide Region on the Temperature Characteristics of QuantumWell Lasers

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