Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

Zhangcheng Xu; K. Leosson; Dan Birkedal; Jørn Märcher Hvam; I. Sadowski; Z.Y. Zhao; X.S. Chen; Y.M. Liu; K.T. Yang

doi:10.1016/S0022-0248(02)02388-6

Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

Zhangcheng Xu, K. Leosson, Dan Birkedal, Jørn Märcher Hvam, I. Sadowski, Z.Y. Zhao, X.S. Chen, Y.M. Liu, K.T. Yang

Research output: Contribution to journal › Conference article › Research › peer-review

Abstract

The change of phonon energies of annealed InGaAs/GaAs quantum dots (QDs), was observed using selectively excited photoluminescence. X-ray diffraction and optical anisotropy analysis shows that the QDs' structure mainly changes along the growth direction. (C) 2002 Elsevier Science B.V. All rights reserved.

Original language	English
Journal	Journal of Crystal Growth
Volume	251
Issue number	1-4
Pages (from-to)	177-180
ISSN	0022-0248
DOIs	https://doi.org/10.1016/S0022-0248(02)02388-6
Publication status	Published - Apr 2003
Event	12th International Conference on Molecular Beam Epitaxy (MBE-XII) - San Francisco, CA, United States Duration: 15 Sept 2002 → 20 Sept 2002 Conference number: 12

Conference

Conference	12th International Conference on Molecular Beam Epitaxy (MBE-XII)
Number	12
Country/Territory	United States
City	San Francisco, CA
Period	15/09/2002 → 20/09/2002

Keywords

nanostructures
X-ray diffraction
molecular beam epitaxy
semiconducting III-V materials

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10.1016/S0022-0248(02)02388-6

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@inproceedings{35cf31257018479dad08c97f3d24aec4,

title = "Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots",

abstract = "The change of phonon energies of annealed InGaAs/GaAs quantum dots (QDs), was observed using selectively excited photoluminescence. X-ray diffraction and optical anisotropy analysis shows that the QDs' structure mainly changes along the growth direction. (C) 2002 Elsevier Science B.V. All rights reserved. ",

keywords = "nanostructures, X-ray diffraction, molecular beam epitaxy, semiconducting III-V materials ",

author = "Zhangcheng Xu and K. Leosson and Dan Birkedal and Hvam, \{J{\o}rn M{\"a}rcher\} and I. Sadowski and Z.Y. Zhao and X.S. Chen and Y.M. Liu and K.T. Yang",

year = "2003",

month = apr,

doi = "10.1016/S0022-0248(02)02388-6",

language = "English",

volume = "251",

pages = "177--180",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

note = "12th International Conference on Molecular Beam Epitaxy (MBE-XII), MBE-XII ; Conference date: 15-09-2002 Through 20-09-2002",

}

TY - GEN

T1 - Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

AU - Xu, Zhangcheng

AU - Leosson, K.

AU - Birkedal, Dan

AU - Hvam, Jørn Märcher

AU - Sadowski, I.

AU - Zhao, Z.Y.

AU - Chen, X.S.

AU - Liu, Y.M.

AU - Yang, K.T.

N1 - Conference code: 12

PY - 2003/4

Y1 - 2003/4

N2 - The change of phonon energies of annealed InGaAs/GaAs quantum dots (QDs), was observed using selectively excited photoluminescence. X-ray diffraction and optical anisotropy analysis shows that the QDs' structure mainly changes along the growth direction. (C) 2002 Elsevier Science B.V. All rights reserved.

AB - The change of phonon energies of annealed InGaAs/GaAs quantum dots (QDs), was observed using selectively excited photoluminescence. X-ray diffraction and optical anisotropy analysis shows that the QDs' structure mainly changes along the growth direction. (C) 2002 Elsevier Science B.V. All rights reserved.

KW - nanostructures

KW - X-ray diffraction

KW - molecular beam epitaxy

KW - semiconducting III-V materials

U2 - 10.1016/S0022-0248(02)02388-6

DO - 10.1016/S0022-0248(02)02388-6

M3 - Conference article

SN - 0022-0248

VL - 251

SP - 177

EP - 180

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - 12th International Conference on Molecular Beam Epitaxy (MBE-XII)

Y2 - 15 September 2002 through 20 September 2002

ER -

Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

Abstract

Conference

Keywords

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