Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

Zhangcheng Xu; Kristjan Leosson; Dan Birkedal; Jørn Märcher Hvam; J. Sadowski; Y. Liu; K. Yang; Z. Zhao; X. Chen

doi:10.1109/MBE.2002.1037915

Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

Zhangcheng Xu
, Kristjan Leosson
, Dan Birkedal
, Jørn Märcher Hvam
, J. Sadowski
, Y. Liu
, K. Yang
, Z. Zhao
, X. Chen

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

434 Downloads (Orbit)

Abstract

We report the effect of annealing on self-assembled InGaAs/GaAs quantum dots, as investigated by means of resonant photoluminescence (PL), resonant Raman scattering, polarization dependent PL, and high resolution X-ray diffraction.

Original language	English
Title of host publication	International Conference on Molecular Beam Epitaxy, 2002
Publisher	IEEE
Publication date	2002
Pages	373-374
ISBN (Print)	07-80-37581-5
DOIs	https://doi.org/10.1109/MBE.2002.1037915
Publication status	Published - 2002
Event	12th International Conference on Molecular Beam Epitaxy (MBE-XII) - San Francisco, CA, United States Duration: 15 Sept 2002 → 20 Sept 2002 Conference number: 12

Conference

Conference	12th International Conference on Molecular Beam Epitaxy (MBE-XII)
Number	12
Country/Territory	United States
City	San Francisco, CA
Period	15/09/2002 → 20/09/2002

Bibliographical note

Copyright: 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

Access to Document

10.1109/MBE.2002.1037915

Full textFinal published version, 169 KB

OpenUrl availability

Full text

Cite this

@inproceedings{cfa1bf1f196845a1ada1768e8319eb05,

title = "Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots",

abstract = "We report the effect of annealing on self-assembled InGaAs/GaAs quantum dots, as investigated by means of resonant photoluminescence (PL), resonant Raman scattering, polarization dependent PL, and high resolution X-ray diffraction.",

author = "Zhangcheng Xu and Kristjan Leosson and Dan Birkedal and Hvam, \{J{\o}rn M{\"a}rcher\} and J. Sadowski and Y. Liu and K. Yang and Z. Zhao and X. Chen",

note = "Copyright: 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; 12th International Conference on Molecular Beam Epitaxy (MBE-XII), MBE-XII ; Conference date: 15-09-2002 Through 20-09-2002",

year = "2002",

doi = "10.1109/MBE.2002.1037915",

language = "English",

isbn = "07-80-37581-5",

pages = "373--374",

booktitle = "International Conference on Molecular Beam Epitaxy, 2002",

publisher = "IEEE",

address = "United States",

}

Xu, Z, Leosson, K, Birkedal, D, Hvam, JM, Sadowski, J, Liu, Y, Yang, K, Zhao, Z & Chen, X 2002, Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots. in International Conference on Molecular Beam Epitaxy, 2002. IEEE, pp. 373-374, 12th International Conference on Molecular Beam Epitaxy (MBE-XII), San Francisco, CA, United States, 15/09/2002. https://doi.org/10.1109/MBE.2002.1037915

TY - GEN

T1 - Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

AU - Xu, Zhangcheng

AU - Leosson, Kristjan

AU - Birkedal, Dan

AU - Hvam, Jørn Märcher

AU - Sadowski, J.

AU - Liu, Y.

AU - Yang, K.

AU - Zhao, Z.

AU - Chen, X.

N1 - Conference code: 12

PY - 2002

Y1 - 2002

N2 - We report the effect of annealing on self-assembled InGaAs/GaAs quantum dots, as investigated by means of resonant photoluminescence (PL), resonant Raman scattering, polarization dependent PL, and high resolution X-ray diffraction.

AB - We report the effect of annealing on self-assembled InGaAs/GaAs quantum dots, as investigated by means of resonant photoluminescence (PL), resonant Raman scattering, polarization dependent PL, and high resolution X-ray diffraction.

U2 - 10.1109/MBE.2002.1037915

DO - 10.1109/MBE.2002.1037915

M3 - Article in proceedings

SN - 07-80-37581-5

SP - 373

EP - 374

BT - International Conference on Molecular Beam Epitaxy, 2002

PB - IEEE

T2 - 12th International Conference on Molecular Beam Epitaxy (MBE-XII)

Y2 - 15 September 2002 through 20 September 2002

ER -

Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

Abstract

Conference

Bibliographical note

Access to Document

OpenUrl availability

Fingerprint

Cite this