Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

Zhangcheng Xu, Kristjan Leosson, Dan Birkedal, Jørn Märcher Hvam, J. Sadowski, Y. Liu, K. Yang, Z. Zhao, X. Chen

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Abstract

We report the effect of annealing on self-assembled InGaAs/GaAs quantum dots, as investigated by means of resonant photoluminescence (PL), resonant Raman scattering, polarization dependent PL, and high resolution X-ray diffraction.
Original languageEnglish
Title of host publicationInternational Conference on Molecular Beam Epitaxy, 2002
PublisherIEEE
Publication date2002
Pages373-374
ISBN (Print)07-80-37581-5
DOIs
Publication statusPublished - 2002
Event12th International Conference on Molecular Beam Epitaxy (MBE-XII) - San Francisco, CA, United States
Duration: 15 Sep 200220 Sep 2002
Conference number: 12

Conference

Conference12th International Conference on Molecular Beam Epitaxy (MBE-XII)
Number12
Country/TerritoryUnited States
CitySan Francisco, CA
Period15/09/200220/09/2002

Bibliographical note

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