Abstract
We report the effect of annealing on self-assembled InGaAs/GaAs quantum dots, as investigated by means of resonant photoluminescence (PL), resonant Raman scattering, polarization dependent PL, and high resolution X-ray diffraction.
Original language | English |
---|---|
Title of host publication | International Conference on Molecular Beam Epitaxy, 2002 |
Publisher | IEEE |
Publication date | 2002 |
Pages | 373-374 |
ISBN (Print) | 07-80-37581-5 |
DOIs | |
Publication status | Published - 2002 |
Event | 12th International Conference on Molecular Beam Epitaxy (MBE-XII) - San Francisco, CA, United States Duration: 15 Sep 2002 → 20 Sep 2002 Conference number: 12 |
Conference
Conference | 12th International Conference on Molecular Beam Epitaxy (MBE-XII) |
---|---|
Number | 12 |
Country | United States |
City | San Francisco, CA |
Period | 15/09/2002 → 20/09/2002 |