Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

Zhangcheng Xu, K. Leosson, Dan Birkedal, Jørn Märcher Hvam, I. Sadowski, Z.Y. Zhao, X.S. Chen, Y.M. Liu, K.T. Yang

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

The change of phonon energies of annealed InGaAs/GaAs quantum dots (QDs), was observed using selectively excited photoluminescence. X-ray diffraction and optical anisotropy analysis shows that the QDs' structure mainly changes along the growth direction. (C) 2002 Elsevier Science B.V. All rights reserved.
Original languageEnglish
JournalJournal of crystal growth
Volume251
Issue number1-4
Pages (from-to)177-180
ISSN0022-0248
DOIs
Publication statusPublished - Apr 2003
Event12th International Conference on Molecular Beam Epitaxy (MBE-XII) - San Francisco, CA, United States
Duration: 15 Sep 200220 Sep 2002
Conference number: 12

Conference

Conference12th International Conference on Molecular Beam Epitaxy (MBE-XII)
Number12
CountryUnited States
CitySan Francisco, CA
Period15/09/200220/09/2002

Keywords

  • nanostructures
  • X-ray diffraction
  • molecular beam epitaxy
  • semiconducting III-V materials

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